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参数资料
| 型号： | IRLML6401 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/9页 |
| 文件大小： | 142K |
| 代理商： | IRLML6401 |
Parameter
Typ.
75
Max.
100
Units
R
θ
JA
Maximum Junction-to-Ambient
HEXFET Power MOSFET
Thermal Resistance
V
DSS
= -12V
R
DS(on)
= 0.05
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
1.8V Gate Rated
04/29/03
www.irf.com
1
Parameter
Max.
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
± 8.0
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
W/°C
mJ
V
°C
E
AS
V
GS
T
J,
T
STG
-55 to + 150
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET
power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3
, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Micro3
S
G 1
2
D
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLML6401GPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFETPower MOSFET |
| IRLML6401GTRPBF | 功能描述:MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLML6401PBF | 制造商:International Rectifier 功能描述:Bulk 制造商:International Rectifier 功能描述:MOSFET P -12V -4.3A MICRO 3 制造商:International Rectifier 功能描述:MOSFET, P, -12V, -4.3A, MICRO 3 制造商:International Rectifier 功能描述:MOSFET, P, -12V, -4.3A, MICRO 3; Transistor Polarity:P Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-550mV ;RoHS Compliant: Yes |
| IRLML6401PBF_10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Ultra Low On-Resistance, P-Channel MOSFET, SOT-23 Footprint |
| IRLML6401TR | 功能描述:MOSFET P-CH 12V 4.3A SOT-23 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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