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参数资料
| 型号： | IRLML6401 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 8/9页 |
| 文件大小： | 142K |
| 代理商： | IRLML6401 |
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www.irf.com
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EXAMPLE: THIS IS AN IRLML6302
DATE CODE EXAMPLES:
YWW = 9532 = EF
YWW = 9503 = 5C
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
Notes: This part marking information applies to devices produced before 02/26/2001
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H
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PART NUMBER
PART NUMBER CODE REFERENCE:
WW = (27-52) IF PRECEDED BY A LETTER
DATE
CODE
1C = IRLML6302
1D = IRLML5103
1E = IRLML6402
1F = IRLML6401
1G = IRLML2502
1H = IRLML5203
1A = IRLML2402
1B = IRLML2803
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W
YEAR
A
B
C
D
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
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1995
1996
1997
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PART NUMBER
Y = YEAR
W = WEEK
WORK
WEEK
WEEK
WORK
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
PART NUMBER CODE REFERENCE:
25
26
Y
Z
G = IRLML2502
H = IRLML5203
F = IRLML6401
LOT
CODE
Notes: This part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
01
02
03
04
24
W
YEAR
Y
A
B
C
D
2001
2002
2003
1994
1
2
3
4
X
W = (27-52) IF PRECEDED BY A LETTER
27
28
相关PDF资料 |
PDF描述 |
|---|---|
| IRLML6402PBF | HEXFET Power MOSFET |
| IRLMS1902 | HEXFET Power MOSFET |
| IRLMS2002 | HEXFET Power MOSFET |
| IRLMS5703 | HEXFET Power MOSFET |
| IRLMS6802 | HEXFET Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLML6401GPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFETPower MOSFET |
| IRLML6401GTRPBF | 功能描述:MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLML6401PBF | 制造商:International Rectifier 功能描述:Bulk 制造商:International Rectifier 功能描述:MOSFET P -12V -4.3A MICRO 3 制造商:International Rectifier 功能描述:MOSFET, P, -12V, -4.3A, MICRO 3 制造商:International Rectifier 功能描述:MOSFET, P, -12V, -4.3A, MICRO 3; Transistor Polarity:P Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-550mV ;RoHS Compliant: Yes |
| IRLML6401PBF_10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Ultra Low On-Resistance, P-Channel MOSFET, SOT-23 Footprint |
| IRLML6401TR | 功能描述:MOSFET P-CH 12V 4.3A SOT-23 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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