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参数资料
| 型号： | IRLML6402TR |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 81K |
| 代理商： | IRLML6402TR |
IRLML6402
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.0A
di/dt = -100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
–––
–––
–––
–––
29
11
-1.2
43
17
V
ns
nC
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Source-Drain Ratings and Characteristics
-1.3
-22
A
S
D
G
** For recommended footprint and soldering techniques refer to application note #AN-994.
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting T
J
= 25°C, L = 1.65mH
R
G
= 25
, I
AS
= -3.7A.
Parameter
Min. Typ. Max. Units
-20
–––
––– -0.009 –––
––– 0.050 0.065
––– 0.080 0.135
-0.40 -0.55 -0.95
6.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
–––
1.2
–––
2.8
–––
350
–––
48
–––
588
–––
381
–––
633
–––
145
–––
110
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -3.7A
V
GS
= -2.5V, I
D
= -3.1A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -3.7A
V
DS
= -20V, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V, T
J
= 70°C
V
GS
= -12V
V
GS
= 12V
I
D
= -3.7A
V
DS
= -10V
V
GS
= -5.0V
V
DD
= -10V
I
D
= -3.7A
R
G
= 89
R
D
= 2.7
V
GS
= 0V
V
DS
= -10V
= 1.0MHz
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
–––
-1.0
-25
-100
100
12
1.8
4.2
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
μA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
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