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参数资料
| 型号： | IRLMS2002 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 95K |
| 代理商： | IRLMS2002 |
2
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Parameter
Min. Typ. Max. Units
20
–––
––– 0.016 –––
–––
––– 0.030
–––
––– 0.045
0.60
–––
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
–––
2.2
–––
3.5
–––
8.5
–––
11
–––
36
–––
16
–––
1310 –––
–––
150
–––
36
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 6.5A
V
GS
= 2.5V, I
D
= 5.2A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 6.5A
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
V
GS
= -12V
V
GS
= 12V
I
D
= 6.5A
V
DS
= 10V
V
GS
= 5.0V
V
DD
= 10V
I
D
= 1.0A
R
G
= 6.0
R
D
= 10
V
GS
= 0V
V
DS
= 15V
= 1.0MHz
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
1.2
–––
1.0
25
-100
100
22
3.3
5.3
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
19
13
1.2
29
20
V
ns
nC
Source-Drain Ratings and Characteristics
20
2.0
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
400μs; duty cycle
≤
Surface mounted on FR-4 board, t
≤
S
D
G
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