- 您现在的位置：买卖IC网 > PDF目录17533 > IRS2336DSPBF (International Rectifier)IC DRIVER BRIDGE 3-PHASE 28-SOIC PDF资料下载
参数资料
| 型号： | IRS2336DSPBF |
| 厂商： | International Rectifier |
| 文件页数： | 29/49页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER BRIDGE 3-PHASE 28-SOIC |
| 标准包装： | 25 |
| 配置： | 3 相桥 |
| 输入类型： | 差分 |
| 延迟时间： | 530ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 3 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 28-SOIC W |
| 包装： | 管件 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页当前第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页
IRS2336x(D) Family
V B1
V CC
V B2
V B3
Figure 22: Internal bootstrap MOSFET connection
Figure 23: Bootstrap MOSFET state diagram
A bootstrap MOSFET is suitable for most of the PWM modulation schemes and can be used either in parallel with the
external bootstrap network (i.e., diode and resistor) or as a replacement of it. The use of the integrated bootstrap as
a replacement of the external bootstrap network may have some limitations. An example of this limitation may arise
when this functionality is used in non-complementary PWM schemes (typically 6-step modulations) and at very high
PWM duty cycle. In these cases, superior performances can be achieved by using an external bootstrap diode in
parallel with the internal bootstrap network.
Bootstrap Power Supply Design
For information related to the design of the bootstrap power supply while using the integrated bootstrap functionality
of the IRS2336xD family, please refer to Application Note 1123 (AN-1123) entitled “Bootstrap Network Analysis:
Focusing on the Integrated Bootstrap Functionality.” This application note is available at www.irf.com .
For information related to the design of a standard bootstrap power supply (i.e., using an external discrete diode)
please refer to Design Tip 04-4 (DT04-4) entitled “Using Monolithic High Voltage Gate Drivers.” This design tip is
available at www.irf.com .
Separate Logic and Power Grounds
The IRS2336xD has separate logic and power ground pin (V SS and COM respectively) to eliminate some of the noise
problems that can occur in power conversion applications. Current sensing shunts are commonly used in many
applications for power inverter protection (i.e., over-current protection), and in the case of motor drive applications, for
motor current measurements. In these situations, it is often beneficial to separate the logic and power grounds.
Figure 24 shows a HVIC with separate V SS and COM pins and how these two grounds are used in the system. The
V SS is used as the reference point for the logic and over-current circuitry; V X in the figure is the voltage between the
ITRIP pin and the V SS pin. Alternatively, the COM pin is the reference point for the low-side gate drive circuitry. The
output voltage used to drive the low-side gate is V LO -COM; the gate-emitter voltage (V GE ) of the low-side switch is the
output voltage of the driver minus the drop across R G,LO .
www.irf.com
29
? 2009 International Rectifier
相关PDF资料 |
PDF描述 |
|---|---|
| RPM40-243.3SG-DIN | CONV DC/DC 40W 18-36VIN 3.3VOUT |
| T95X475K025LZAL | CAP TANT 4.7UF 25V 10% 2910 |
| RPM40-2415SG-DIN | CONV DC/DC 40W 18-36VIN 15VOUT |
| 3292P-1-100 | TRIMMER 10 OHM 0.5W TH |
| QYX1H683JTP | CAP FILM 0.068UF 50VDC RADIAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2336DSTRPBF | 功能描述:功率驱动器IC 600V 3Phs Drvr IC w/Intgr BSF & Prot RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2336JPBF | 功能描述:功率驱动器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2336JTRPBF | 功能描述:功率驱动器IC 600V 3Phs Drvr IC w/ Prot w/out iBSF RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2336PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS2336SPBF | 功能描述:功率驱动器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。