参数资料
型号: IRS26072DSPBF
厂商: International Rectifier
文件页数: 22/30页
文件大小: 0K
描述: IC DVR HI/LOW SIDE 600V 8-SOIC
标准包装: 95
配置: 高端和低端,独立
输入类型: 非反相
延迟时间: 200ns
电流 - 峰: 200mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
IRS26072DSPbF
Relevant Application Situations:
The above mentioned bias condition may be encountered under the following situations:
?
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In a motor control application, a permanent magnet motor naturally rotating while VCC power is OFF. In
this condition, Back EMF is generated at a motor terminal which causes high voltage bias on VS nodes
resulting unwanted current flow to VCC.
Potential situations in other applications where VS/VB node voltage potential increases before the VCC
voltage is available (for example due to sequencing delays in SMPS supplying VCC bias)
Application Workaround:
Insertion of a standard p-n junction diode between VCC pin of IC and positive terminal of VCC capacitors (as
illustrated in Fig.25) prevents current conduction “out-of” VCC pin of gate driver IC. It is important not to connect the
VCC capacitor directly to pin of IC. Diode selection is based on 25V rating or above & current capability aligned to
ICC consumption of IC - 100mA should cover most application situations. As an example, Part number # LL4154
from Diodes Inc (25V/150mA standard diode) can be used.
VCC
VCC
VB
Capacitor
VSS
(or COM)
Figure 25: Diode insertion between VCC pin and VCC capacitor
Note that the forward voltage drop on the diode ( V F ) must be taken into account when biasing the VCC pin of
the IC to meet UVLO requirements. VCC pin Bias = VCC Supply Voltage – V F of Diode .
Additional Documentation
Several technical documents related to the use of HVICs are available at www.irf.com ; use the Site Search
function and the document number to quickly locate them. Below is a short list of some of these documents.
DT97-3: Managing Transients in Control IC Driven Power Stages
AN-1123: Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality
DT04-4: Using Monolithic High Voltage Gate Drivers
AN-978: HV Floating MOS-Gate Driver ICs
Parameter Temperature Trends
Figures 26-43 provide information on the experimental performance of the IRS26072D HVIC. The line plotted
in each figure is generated from actual experimental data. A small number of individual samples were tested
at three temperatures (-40 oC, 25 oC, and 125 oC) in order to generate the experimental curve. The line consist
of three data points (one data point at each of the tested temperatures) that have been connected together to
illustrate the understood temperature trend. The individual data points on the curve were determined by
calculating the averaged experimental value of the parameter (for a given temperature).
www.irf.com
22
? 2009 International Rectifier
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