参数资料
型号: IRS2607DSTRPBF
厂商: International Rectifier
文件页数: 8/28页
文件大小: 0K
描述: IC DVR MOSFET/IGBT N-CH 8-SOIC
标准包装: 1
配置: 高端和低端,独立
输入类型: 非反相
延迟时间: 515ns
电流 - 峰: 200mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
产品目录页面: 1382 (CN2011-ZH PDF)
其它名称: IRS2607DSTRPBFDKR
IRS2607DSPbF Rev22
Switching and Timing Relationships
The relationships between the input and output signals of the IRS2607D are illustrated below in Figures 3, 4. From
these figures, we can see the definitions of several timing parameters (i.e., PW IN , PW OUT , t ON , t OFF , t R , and t F ) associated
with this device.
LINx
(or HINx)
50%
PW IN
50%
t ON
t R
PW OUT
t OFF
t F
LOx
(or HOx)
90%
10%
90%
10%
Figure 3: Switching time waveforms
Figure 4: Input/output timing diagram
Matched Propagation Delays
The IRS2607D family of HVICs is designed with propagation delay matching circuitry. With this feature, the IC’s
response at the output to a signal at the input requires approximately the same time duration (i.e., t ON , t OFF ) for both the
low-side channels and the high-side channels; the maximum difference is specified by the delay matching parameter
(MT). The propagation turn-on delay (t ON ) of the IRS2607D is matched to the propagation turn-on delay (t OFF ).
www.irf.com
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相关代理商/技术参数
参数描述
IRS2608DSPBF 功能描述:功率驱动器IC 600V Half-Bridge 10 to 20V 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2608DSPBF_1 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER
IRS2608DSTRPBF 功能描述:功率驱动器IC Hlf Brdg Drvr 600V .250A Compl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2609DSPBF 功能描述:功率驱动器IC Half-Bridge Driver 600V 120mA 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2609DSPBF_11 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER