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参数资料
| 型号： | IS61C3216-20T |
| 英文描述： | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K的× 16 HIGH-SPEED的CMOS静态RAM |
| 文件页数： | 4/8页 |
| 文件大小： | 432K |
| 代理商： | IS61C3216-20T |
IS61C3216
4
Integrated Circuit Solution Inc.
SR008-0B
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-10
-12
-15
-20
Symbol
Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
t
RC
Read Cycle Time
10
—
12
—
15
—
20
—
ns
t
AA
Address Access Time
—
10
—
12
—
15
—
20
ns
t
OHA
Output Hold Time
3
—
3
—
3
—
3
—
ns
t
ACE
CE
Access Time
—
10
—
12
—
15
—
20
ns
t
DOE
OE
Access Time
—
5
—
5
—
7
—
8
ns
t
HZOE
(2)
OE
to High-Z Output
0
5
0
6
0
7
—
8
ns
t
LZOE
(2)
OE
to Low-Z Output
0
—
0
—
0
—
0
—
ns
t
HZCE
(2
CE
to High-Z Output
0
5
0
6
0
7
0
8
ns
t
LZCE
(2)
CE
to Low-Z Output
4
—
4
—
4
—
4
—
ns
t
BA
LB
,
UB
Access Time
—
5
—
6
—
7
—
8
ns
t
HZB
LB
,
UB
to High-Z Output
0
5
0
6
0
7
—
8
ns
t
LZB
LB
,
UB
to Low-Z Output
5
—
5
—
5
—
5
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0 to 3.0V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
3 ns
Input and Output Timing
1.5V
and Reference Level
Output Load
See Figures 1a and 1b
AC TEST LOADS
Figure 1a.
Figure 1b.
480
30 pF
Including
jig and
scope
255
OUTPUT
5V
480
5 pF
Including
jig and
scope
255
OUTPUT
5V
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C3216-20TI | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12KI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61C3216AL-12KLI | 功能描述:静态随机存取存储器 512K 32Kx16 12ns Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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