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参数资料
| 型号： | IS61C3216-20T |
| 英文描述： | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K的× 16 HIGH-SPEED的CMOS静态RAM |
| 文件页数： | 6/8页 |
| 文件大小： | 432K |
| 代理商： | IS61C3216-20T |
IS61C3216
6
Integrated Circuit Solution Inc.
SR008-0B
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-10
-12
-15
-20
Symbol
Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
t
WC
Write Cycle Time
10
—
12
—
15
—
20
—
ns
t
SCE
CE
to Write End
9
—
10
—
11
—
12
—
ns
t
AW
Address Setup Time
9
—
10
—
11
—
12
—
ns
to Write End
t
HA
Address Hold from Write End
1
—
1
—
1
—
1
—
ns
t
SA
Address Setup Time
0
—
0
—
0
—
0
—
ns
t
PWB
LB
,
UB
Valid to End of Write
9
—
10
—
11
—
12
—
ns
t
PWE
WE
Pulse Width
7
—
8
—
10
—
11
—
ns
t
SD
Data Setup to Write End
5
—
6
—
7
—
8
—
ns
t
HD
Data Hold from Write End
0
—
0
—
0
—
0
—
ns
t
HZWE
(2)
WE
LOW to High-Z Output
—
5
—
6
—
7
—
8
ns
t
LZWE
(2)
WE
HIGH to Low-Z Output
1
—
1
—
1
—
1
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
, and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
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|---|---|
| IS61C3216-20TI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-25U | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-15J | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-15U | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C3216-20TI | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12KI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61C3216AL-12KLI | 功能描述:静态随机存取存储器 512K 32Kx16 12ns Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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