参数资料
型号: IS61C64AL-10TI
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: DRAM
英文描述: 8K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 8K X 8 STANDARD SRAM, 10 ns, PDSO28
封装: PLASTIC, TSOP1-28
文件页数: 13/13页
文件大小: 105K
代理商: IS61C64AL-10TI
Integrated Silicon Solution, Inc.
ISSI
PACKAGING INFORMATION
D
SEATING PLANE
B
e
C
1
E
A1
A
S
H
L
α
N
Plastic TSOP - 28-pins
Package Code: T (Type I)
Plastic TSOP (T—Type I)
Millimeters
Min
Max
Inches
Min
Symbol
Ref. Std.
No. Leads
A
A1
B
C
D
E
H
e
L
α
Max
28
1.00
0.05
0.16
0.10
7.90
11.70
13.20
0.55 BSC
0.30
0
°
1.20
0.20
0.27
0.20
8.10
11.90
13.60
0.037
0.002
0.006
0.004
0.308
0.456
0.515
0.022 BSC
0.011
0
°
0.047
0.008
0.011
0.008
0.316
0.465
0.531
0.70
5
°
0.027
5
°
Notes:
1. Controlling dimension: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E do not include mold flash protrusions and
should be measured from the bottom of the package
.
4. Formed leads shall be planar with respect to one another within
0.004 inches at the seating plane.
PK13197T28 Rev. B 01/31/97
相关PDF资料
PDF描述
IS61C64AL-10TLI 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64B 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C67-15N 16K X 1 HIGH SPEED CMOS STATIC RAM
IS61C67-20N 16K X 1 HIGH SPEED CMOS STATIC RAM
IS61C67-25N 16K X 1 HIGH SPEED CMOS STATIC RAM
相关代理商/技术参数
参数描述
IS61C64AL-10TLI 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
IS61C64AL-10TLI-TR 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
IS61C64B 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64B-10J 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64B-10N 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM