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参数资料
| 型号： | IS61C64AL-10TI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 8K X 8 STANDARD SRAM, 10 ns, PDSO28 |
| 封装： | PLASTIC, TSOP1-28 |
| 文件页数： | 3/13页 |
| 文件大小： | 105K |
| 代理商： | IS61C64AL-10TI |
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IS61C64AL
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/16/06
3
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +150
1.5
20
Unit
V
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Note:
1. If operated at 12ns, V
DD
range is 5V + 10%.
Ambient Temperature
0°C to +70°C
–40°C to +85°C
Speed
-10
-10
V
DD
(1)
5V ± 5%
5V ± 5%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.2
–0.3
–1
–2
–1
–2
Max.
—
0.4
V
DD
+ 0.5
0.8
1
2
1
2
Unit
V
V
V
V
μA
GND
≤
V
IN
≤
V
DD
Com.
Ind.
Com.
Ind.
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
DD
,
Outputs Disabled
μA
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61C64AL-10TLI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C67-15N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
| IS61C67-20N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
| IS61C67-25N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C64AL-10TLI | 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61C64AL-10TLI-TR | 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61C64B | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-10J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-10N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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