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参数资料
| 型号： | IS61C64AL-10TI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 8K X 8 STANDARD SRAM, 10 ns, PDSO28 |
| 封装： | PLASTIC, TSOP1-28 |
| 文件页数： | 4/13页 |
| 文件大小： | 105K |
| 代理商： | IS61C64AL-10TI |
IS61C64AL
ISSI
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/16/06
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10
Min.
-12
Symbol
Parameter
Test Conditions
Max.
Min.
Max.
Unit
I
CC
1
V
DD
Operating
Supply Current
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = 0
Com.
Ind.
—
—
20
25
—
—
20
25
mA
I
CC
2
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
typ.
(2)
—
—
45
50
—
—
35
45
mA
25
25
I
SB
1
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
Com.
Ind.
—
—
1
2
—
—
1
2
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
typ.
(2)
—
—
350
450
—
—
350
450
μA
200
200
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 5V, T
A
= 25
o
C. Not 100% tested.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
10
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 5.0V.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61C64AL-10TLI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C67-15N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
| IS61C67-20N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
| IS61C67-25N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C64AL-10TLI | 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61C64AL-10TLI-TR | 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61C64B | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-10J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-10N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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