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参数资料
| 型号： | IS61DDB42M18-250M3 |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| 中文描述： | 2M X 18 DDR SRAM, 0.35 ns, PBGA165 |
| 封装： | 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 |
| 文件页数： | 14/26页 |
| 文件大小： | 460K |
| 代理商： | IS61DDB42M18-250M3 |
14
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/09/04
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 4) CIO Synchronous SRAMs
Typical AC Input Characteristics
Item
Symbol
Minimum
Maximum
Notes
AC input logic high
V
IH
(ac)
V
REF
+ 0.4
1, 2, 3, 4
AC input logic low
V
IL
(ac)
V
REF
- 0.4
1, 2, 3, 4
Clock input logic high (K, K, C, C)
V
IH-CLK
(ac)
V
REF
+ 0.4
1, 2, 3
Clock input logic low (K, K, C, C)
V
IL-CLK
(ac)
V
REF
- 0.4
1, 2, 3
1. The peak-to-peak AC component superimposed on V
REF
may not exceed 5% of the DC component of V
REF
.
2. Performance is a function of V
IH
and V
IL
levels to clock inputs.
3. See the
AC Input Definition
diagram.
4. See the
AC Input Definition
diagram. The signals should swing monotonically with no steps rail-to-rail with input signals never ring-
ing back past VIH (AC) and VIL (AC) during the input setup and input hold window. VIH (AC) and VIL (AC) are used for timing pur-
poses only.
AC Input Definition
Programmable Impedance Output Driver DC Electrical Characteristics
(T
A
= 0 to +70
°
C, V
DD
= 1.8V -5%, +5%, V
DDQ
= 1.5, 1.8V)
Parameter
Symbol
Minimum
Maximum
Units
Notes
Output
“
high
”
level voltage
V
OH
V
DDQ
/ 2
V
DDQ
V
1, 3
Output
“
low
”
level voltage
V
OL
V
SS
V
DDQ
/ 2
V
2, 3
1. I
OH
=
±
15% @ V
OH
= V
DDQ
/ 2 For: 175
≤
RQ
≤
350
.
2. I
OL
=
±
15% @ V
OL
= V
DDQ
/ 2 For: 175
≤
RQ
≤
350
.
3. Parameter tested with RQ = 250
and V
DDQ
= 1.5V.
V
IH
(AC)
V
REF
V
IL
(AC)
Setup
Time
Hold
Time
V
REF
K
K
V
RAIL
V
-RAIL
V2
5
RQ
V2
5
RQ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61DDB42M18-250M3L | 功能描述:静态随机存取存储器 36M (2Mx18) 250ns DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18A-250M3L | 功能描述:静态随机存取存储器 36Mb 2Mx18 165ball DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M36 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61DDB42M36-250M3 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61DDB42M36-250M3L | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
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