- 您现在的位置：买卖IC网 > PDF目录377557 > IS61DDB42M18-250M3 (INTEGRATED SILICON SOLUTION INC) 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs PDF资料下载
参数资料
| 型号： | IS61DDB42M18-250M3 |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| 中文描述： | 2M X 18 DDR SRAM, 0.35 ns, PBGA165 |
| 封装： | 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 |
| 文件页数： | 8/26页 |
| 文件大小： | 460K |
| 代理商： | IS61DDB42M18-250M3 |
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/09/04
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 4) CIO Synchronous SRAMs
Timing Reference Diagram for Truth Table
Clock Truth Table
(Use the following table with the
Timing Reference Diagram for Truth Table
.)
Mode
Clock
Controls
Data Out / Data In
K
LD
t
t+1
t+2
Write B
A
K Clock
K Clock
LD
Cycle
NOP
Read A
B
R / W
Address
Data-In/Out (DQ)
C Clock
C Clock
BW
t
W
Q
A
Q
A+1
t
W+1
D
B
D
B+1
t
W+2
D
B+2
D
B+3
Q
A+2
Q
A+3
0,1,2,3
CQ Clock
CQ Clock
R/W
Q
A
/ D
B
Q
A+1
/ D
B+1
Q
A+2
/ D
B+2
Q
A+3
/ D
B+3
Stop Clock
Stop
X
X
Previous State
Previous State
Previous State
Previous State
No Operation (NOP)
L
→
H
H
H
High-Z
High-Z
High-Z
High-Z
Read B
L
→
H
L
H
Dout at C (t +
1.5)
Dout at C
(t + 2)
Dout at C
(t + 2.5)
Dout at C
(t + 3)
Write A
L
→
H
L
L
D
(t
W
+ 1)
D
(t
W
+ 1.5)
D
(t
W
+ 2)
D
(t
W
+ 2.5)
Notes
:
1. The internal burst counter is always fixed as two-bit.
2. X = don
’
t care; H = logic
“
1
”
; L = logic
“
0
”
.
3. A read operation is started when control signal R/W is active high.
4. A write operation is started when control signal R/W is active low.
5. Before entering into the stop clock, all pending read and write commands must be completed.
6. For timing definitions, refer to the
AC Characteristics
on page
16
. Signals must have AC specifications at timings indicated in
parenthesis with respect to switching clocks K, K, C, and C.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61LF12832A | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B2 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B2I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B3 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B3I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61DDB42M18-250M3L | 功能描述:静态随机存取存储器 36M (2Mx18) 250ns DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18A-250M3L | 功能描述:静态随机存取存储器 36Mb 2Mx18 165ball DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M36 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61DDB42M36-250M3 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61DDB42M36-250M3L | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
发布紧急采购，3分钟左右您将得到回复。