- 您现在的位置：买卖IC网 > PDF目录377557 > IS61DDB42M18-250M3 (INTEGRATED SILICON SOLUTION INC) 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs PDF资料下载
参数资料
| 型号： | IS61DDB42M18-250M3 |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| 中文描述： | 2M X 18 DDR SRAM, 0.35 ns, PBGA165 |
| 封装： | 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 |
| 文件页数： | 3/26页 |
| 文件大小： | 460K |
| 代理商： | IS61DDB42M18-250M3 |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/09/04
3
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 4) CIO Synchronous SRAMs
Pin Description
Symbol
Pin Number
Description
K, K
6B, 6A
Input clock.
C, C
6P, 6R
Input clock for output data control.
CQ, CQ
11A, 1A
Output echo clock.
Doff
1H
DLL disable when low.
SA
0,
SA
1
6C, 7C
Burst count address inputs.
SA
9A, 4B, 8B, 5C, 5N, 6N, 7N, 4P, 5P, 7P, 8P, 3R, 4R, 5R, 7R, 8R,
9R
1M x 36 address inputs.
SA
3A, 9A, 4B, 8B, 5C, 5N, 6N, 7N, 4P, 5P, 7P, 8P, 3R, 4R, 5R, 7R,
8R, 9R
2M x 18 address inputs.
DQ0
–
DQ8
DQ9
–
DQ17
DQ18
–
DQ26
DQ27
–
DQ35
11P, 11M, 11L, 11K, 11J, 11F, 11E, 11C, 11B
10P, 11N, 10M, 10K, 10J, 11G, 10E, 11D, 10C
3B, 3D, 3E, 3F, 3G, 3K, 3L, 3N, 3P
2B, 3C, 2D, 2F, 2G, 3J, 2L, 3M, 2N
1M x 36 DQ pins
DQ0
–
DQ8
DQ9
–
DQ17
11P, 10M, 11L, 11K, 10J, 11F, 11E, 10C, 11B
2B, 3D, 3E, 2F, 3G, 3K, 2L, 3N, 3P
2M x 18 DQ pins
R/W
4A
Read/write control. Read when active high.
LD
8A
Synchronizes load. Loads new address
when low.
BW
0,
BW
1,
BW
2,
BW
3
7B, 7A, 5A,5B
1M x 36 byte write control, active low.
BW
0,
BW
1
7B, 5A
2M x 18 byte write control, active low.
V
REF
2H, 10H
Input reference level.
V
DD
5F, 7F, 5G, 7G, 5H, 7H, 5J, 7J, 5K, 7K
Power supply.
V
DDQ
4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L
Output power supply.
V
SS
2A, 10A, 4C, 8C, 4D, 5D, 6D, 7D, 8D, 5E, 6E, 7E, 6F, 6G, 6H, 6J,
6K, 5L, 6L, 7L, 4M, 8M, 4N, 8N
Power supply.
ZQ
11H
Output driver impedance control.
TMS, TDI, TCK
10R, 11R, 2R
IEEE 1149.1 test inputs (1.8V LVTTL lev-
els).
TDO
1R
IEEE 1149.1 test output (1.8V LVTTL level).
相关PDF资料 |
PDF描述 |
|---|---|
| IS61LF12832A | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B2 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B2I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B3 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B3I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61DDB42M18-250M3L | 功能描述:静态随机存取存储器 36M (2Mx18) 250ns DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18A-250M3L | 功能描述:静态随机存取存储器 36Mb 2Mx18 165ball DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M36 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61DDB42M36-250M3 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61DDB42M36-250M3L | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
发布紧急采购，3分钟左右您将得到回复。