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参数资料
| 型号： | IS61DDB42M18 |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| 中文描述： | 36字节（100万× 36 |
| 文件页数： | 10/26页 |
| 文件大小： | 460K |
| 代理商： | IS61DDB42M18 |
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/09/04
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 4) CIO Synchronous SRAMs
X18 Write Truth Table
Use the following table with the
Timing Reference Diagram for Truth Table
on
page
8
.
Operation
K
(t
W
+1)
K
(t
W
+1.5)
K
(t
W
+2)
K
(t
W
+2.5)
BW
0
BW
1
D
B
D
B+1
D
B+2
D
B+3
Write Byte 0
L
→
H
L
H
D0-8
(t
W
+1
)
Write Byte 1
L
→
H
H
L
D9-17
(t
W
+1
)
Abort Write
L
→
H
H
H
Don
’
t care
Write Byte 0
L
→
H
L
H
D0-8
(t
W
+1.5
)
Write Byte 1
L
→
H
H
L
D9-17
(t
W
+1.5
)
Write All Bytes
L
→
H
L
L
D0-
17
(t
W
+1.5
)
Abort Write
L
→
H
H
H
Don
’
t care
Write Byte 0
L
→
H
L
H
D0-8
(t
W
+2
)
Write Byte 1
L
→
H
H
L
D9-17
(t
W
+2
)
Write All Bytes
L
→
H
L
L
D0-
17
(t
W
+2
)
Abort Write
L
→
H
H
H
Don
’
t care
Write Byte 0
L
→
H
L
H
D0-8
(t
W
+2.5
)
Write Byte 1
L
→
H
H
L
D9-17
(t
W
+2.5
)
Write All Bytes
L
→
H
L
L
D0-
17
(t
W
+2.5
)
Abort Write
L
→
H
H
H
Don
’
t care
Notes
;
1. For all cases, R/W needs to be active low during the rising edge of K occurring at time t
W
2. For timing definitions refer to the
AC Characteristics
on page
16
. Signals must have AC specifications with respect to switching
clocks K and K.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61DDB42M18-250M3 | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61LF12832A | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B2 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B2I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B3 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61DDB42M18-250M3 | 功能描述:静态随机存取存储器 36Mb 2Mbx18 DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18-250M3L | 功能描述:静态随机存取存储器 36M (2Mx18) 250ns DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18A-250M3L | 功能描述:静态随机存取存储器 36Mb 2Mx18 165ball DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M36 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61DDB42M36-250M3 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
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