- 您现在的位置：买卖IC网 > PDF目录377557 > IS61DDB42M18 (Integrated Silicon Solution, Inc.) 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs PDF资料下载
参数资料
| 型号： | IS61DDB42M18 |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| 中文描述： | 36字节（100万× 36 |
| 文件页数： | 13/26页 |
| 文件大小： | 460K |
| 代理商： | IS61DDB42M18 |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/09/04
13
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 4) CIO Synchronous SRAMs
Capacitance
(T
A
= 0 to +
70
o
C, V
DD
= 1.8V -5%, +5%, f = 1MHz)
Parameter
Symbol
Test Condition
Maximum
Units
Input capacitance
C
IN
V
IN
= 0V
4
pF
Data-in/Out capacitance (DQ0–DQ35)
C
C
DQ
V
DIN
= 0V
4
pF
Clocks Capacitance (K, K, C, C)
CLK
V
CLK
= 0V
4
pF
DC Electrical Characteristics
(T
A
= 0 to +
o
C, V
DD
= 1.8V -5%, +5%)
Parameter
Symbol
Minimum
Maximum
Units
Notes
x36 average power supply operating current
(I
OUT
= 0, V
IN
= V
IH
or V
IL
)
I
DD30
I
DD40
I
DD50
I
DD30
I
DD40
I
DD50
—
—
—
m
A
1
x18 average power supply operating current
(I
OUT
= 0, V
IN
= V
IH
or V
IL
)
—
—
—
m
A
1
Power supply standby current
(R = V
IH
, W = V
IH
. All other inputs = V
IH
or V
IH
, I
IH
= 0)
I
SBSS
—
200
mA
1
Input leakage current, any input (except JTAG)
(V
IN
= V
SS
or V
DD
)
I
LI
-2
+2
Output leakage current
(V
OUT
= V
SS
or V
DDQ
, Q in High-Z)
I
LO
-5
+5
uA
uA
uA
Output “high” level voltage (I
OH
= -6mA)
V
OH
V
DDQ
V
DDQ
Output “low” level voltage (I
OL
= +6mA)
V
OL
V
SS
V
SS
V
V
JTAG leakage current
(V
IN
= V
SS
or V
DD
)
I
LIJTAG
1. I
OUT
= chip output current.
2. Minimum impedance output driver.
3. JEDEC Standard JESD8-6 Class 1 compatible.
4. For JTAG inputs only.
5. Currents are estimates only and need to be verified.
600
550
500
600
550
500
2, 3
2, 3
4
-0.4
+0.4
-100
+100
相关PDF资料 |
PDF描述 |
|---|---|
| IS61DDB42M18-250M3 | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61LF12832A | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B2 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B2I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B3 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61DDB42M18-250M3 | 功能描述:静态随机存取存储器 36Mb 2Mbx18 DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18-250M3L | 功能描述:静态随机存取存储器 36M (2Mx18) 250ns DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18A-250M3L | 功能描述:静态随机存取存储器 36Mb 2Mx18 165ball DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M36 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61DDB42M36-250M3 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
发布紧急采购，3分钟左右您将得到回复。