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参数资料
| 型号： | IS61NLP12836A-200TQ |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM |
| 中文描述： | 128K X 36 ZBT SRAM, 3.1 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 1/29页 |
| 文件大小： | 235K |
| 代理商： | IS61NLP12836A-200TQ |
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. A
10/03/06
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS61NLP12832A
IS61NLP12836A/IS61NVP12836A
IS61NLP25618A/IS61NVP25618A
FEATURES
100 percent bus utilization
No wait cycles between Read and Write
Internal self-timed write cycle
Individual Byte Write Control
Single R/W (Read/Write) control pin
Clock controlled, registered address,
data and control
Interleaved or linear burst sequence control using
MODE input
Three chip enables for simple depth expansion
and address pipelining
Power Down mode
Common data inputs and data outputs
CKE pin to enable clock and suspend operation
JEDEC 100-pin TQFP, 165-ball PBGA and 119-
ball PBGA packages
Power supply:
NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
Industrial temperature available
Lead-free available
DESCRIPTION
The 4 Meg 'NLP/NVP' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
networking and communications applications. They are
organized as 128K words by 32 bits, 128K words by 36 bits,
and 256K words by 18 bits, fabricated with
ISSI's advanced
CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable,
CKE is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the
ADV input. When the ADV is HIGH the internal burst
counter is incremented. New external addresses can be
loaded when ADV is LOW.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock inputs and when
WE is LOW.
Separate byte enables allow individual bytes to be written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
128K x 32, 128K x 36, and 256K x 18
4Mb, PIPELINE 'NO WAIT' STATE BUS SRAM
OCTOBER 2006
FAST ACCESS TIME
Symbol
Parameter
-250
-200
Units
tKQ
Clock Access Time
2.6
3.1
ns
tKC
Cycle Time
4
5
ns
Frequency
250
200
MHz
相关PDF资料 |
PDF描述 |
|---|---|
| IS61NLP12836A-200TQI | 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM |
| IS61NLP12836A-200TQLI | 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM |
| IS61NLP12836A-250B2 | 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM |
| IS61NVP12836B-200TQ | 128K X 36 ZBT SRAM, 3.1 ns, PQFP100 |
| IS61SP25618-133B | 256K x 16, 256K x 18 SYNCHRONOUS PIPELINED STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61NLP12836A-200TQI | 功能描述:静态随机存取存储器 4Mb 128Kx36 200Mhz 3.3v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61NLP12836A-200TQI-TR | 功能描述:静态随机存取存储器 4Mb 128Kx36 200Mhz 3.3v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61NLP12836A-200TQLI | 功能描述:静态随机存取存储器 4Mb 128Kx36 200Mhz 3.3v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61NLP12836A-200TQLI-TR | 功能描述:静态随机存取存储器 4Mb 128Kx36 200Mhz 3.3v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61NLP12836B-200B2LI | 功能描述:静态随机存取存储器 4Mb 128Kx36 200Mhz Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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