参数资料
型号: IS61SF25616-8.5TQ
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 256K X 16 CACHE SRAM, 8.5 ns, PQFP100
封装: TQFP-100
文件页数: 14/16页
文件大小: 108K
代理商: IS61SF25616-8.5TQ
IS61SF25616
IS61SF25618
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
Rev. A
04/17/01
OPERATING RANGE
Range
Ambient Temperature
VCC
Commercial
0°C to +70°C
3.3V
+10%, –5%
Industrial
–40°C to +85°C
3.3V
+10%, –5%
DC ELECTRICAL CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.0
VCC + 0.3
V
VIL
Input LOW Voltage
–0.3
0.8
V
ILI
Input Leakage Current
GND
≤ VIN ≤ VCCQ(2)
Com.
–22
A
Ind.
–55
ILO
Output Leakage Current
GND
≤ VOUT ≤ VCCQ, OE = VIH Com.
–22
A
Ind.
–55
POWER SUPPLY CHARACTERISTICS (Over Operating Range)
8
8.5
10
12
Symbol
Parameter
Test Conditions
Max.
Unit
ICC
AC Operating
Device Selected,
Com.
180
170
160
150
mA
Supply Current
All Inputs = VIL or VIH
Ind.
180
170
160
OE = VIH, Vcc = Max.
Cycle Time
≥ tKC min.
ISB
Standby Current
Device Deselected,
Com.
50
mA
VCC = Max.,
Ind.
60
All Inputs = VIH or VIL
CLK Cycle Time
≥ tKC min.
IZZ
Power-down
ZZ = VCCQ
Com.
1010
mA
Mode Current
Clock Running
Ind.
15
All Inputs
≤ GND + 0.2V
or
≥ Vcc – 0.2V
Notes:
1. The MODE pin has an internal pullup. This pin may be a No Connect, tied to GND, or tied to VCC.
2. The MODE pin should be tied to Vcc or GND. It exhibits ±10 A maximum leakage current when tied to
≤ GND + 0.2V
or
≥ Vcc – 0.2V.
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