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参数资料
| 型号： | IS63LV1024L-8TI |
| 元件分类： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 8 ns, PDSO32 |
| 封装： | 0.400 INCH, TSOP2-32 |
| 文件页数： | 1/16页 |
| 文件大小： | 260K |
| 代理商： | IS63LV1024L-8TI |
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. M
01/29/2010
Copyright 2005 Integrated Silicon Solution, Inc.
All rights reserved.
ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS63LV1024
IS63LV1024L
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
FEATURES
High-speed access times:
8, 10, 12 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with CE and OE
options
CE power-down
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 3.3V power supply
Packages available:
– 32-pin 300-mil SOJ
– 32-pin 400-mil SOJ
– 32-pin TSOP (Type II)
– 32-pin STSOP (Type I)
– 36-pin BGA (8mmx10mm)
Lead-free Available
DESCRIPTION
The
ISSI IS63LV1024/IS63LV1024L is a very high-speed,
low power, 131,072-word by 8-bit CMOS static RAM in
revolutionary pinout. The IS63LV1024/IS63LV1024L is fab-
ricated using
ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques, yields higher performance and low
power consumption devices.
When
CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 W (typical) with CMOS input levels.
The IS63LV1024/IS63LV1024L operates from a single 3.3V
power supply and all inputs are TTL-compatible.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE
OE
WE
128K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
FEBRUARY 2010
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS63WV1024BLL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BLI | 功能描述:静态随机存取存储器 1M (128Kx8) 12ns Async 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS63WV1024BLL-12BLI-TR | 功能描述:静态随机存取存储器 1M (128Kx8) 12ns Async 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS63WV1024BLL-12HI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
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