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参数资料
| 型号： | IS63LV1024L-8TI |
| 元件分类： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 8 ns, PDSO32 |
| 封装： | 0.400 INCH, TSOP2-32 |
| 文件页数： | 11/16页 |
| 文件大小： | 260K |
| 代理商： | IS63LV1024L-8TI |
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. M
01/29/2010
IS63LV1024
IS63LV1024L
CAPACITANCE(1,2)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
CI/O
Input/Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
IS63LV1024L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 ns
-10 ns
-12 ns
Symbol Parameter
Test Conditions
Min. Max.
Unit
ICC1
VDD Operating
VDD = Max.,
CE = VIL
Com.
—
100
—
95
—
90
mA
Supply Current
IOUT = 0 mA, f = Max.
Ind.
—
110
—
105
—
100
typ.(2)
—75
—
70
—
65
ISB
TTL Standby
VDD = Max.,
Com.
—
35
—
30
—
25
mA
Current
VIN = VIH or VIL
Ind.
—
40
—
35
—
30
(TTL Inputs)
CE
≥ VIH, f = Max
ISB1
TTL Standby
VDD = Max.,
Com.
—
15
—
15
—
15
mA
Current
VIN = VIH or VIL
Ind.
—
20
—
20
—
20
(TTL Inputs)
CE
≥ VIH, f = 0
ISB2
CMOS Standby
VDD = Max.,
Com.
—
1
—
1
—
1
mA
Current
CE
≥ VDD – 0.2V,
Ind.
—
1.5
—
1.5
—
1.5
typ.(2)
—
0.05
—
0.05
—
0.05
(CMOS Inputs)
VIN
≥ VDD – 0.2V, or
VIN
≤ 0.2V, f = 0
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25oC. Not 100% tested.
IS63LV1024 POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 ns
-10 ns
-12 ns
Symbol Parameter
Test Conditions
Min. Max.
Unit
ICC1
VDD Operating
VDD = Max.,
CE = VIL
Com.
—
160
—
150
—
130
mA
Supply Current
IOUT = 0 mA, f = Max.
Ind.
—
170
—
160
—
140
typ.(2)
—
105
—
95
—
75
Ind. (@15 ns)
—
90
ISB
TTL Standby
VDD = Max.,
Com.
—
55
—
45
—
40
mA
Current
VIN = VIH or VIL
Ind.
—
55
—
45
—
40
(TTL Inputs)
CE
≥ VIH, f = Max
ISB1
TTL Standby
VDD = Max.,
Com.
—
25
—
25
—
25
mA
Current
VIN = VIH or VIL
Ind.
—
30
—
30
—
30
(TTL Inputs)
CE
≥ VIH, f = 0
ISB2
CMOS Standby
VDD = Max.,
Com.
—
5
—
5
—
5
mA
Current
CE
≥ VDD – 0.2V,
Ind.
—
10
—
10
—
10
typ.(2)
—
0.5
—
0.5
—
0.5
(CMOS Inputs)
VIN
≥ VDD – 0.2V, or
VIN
≤ 0.2V, f = 0
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25oC. Not 100% tested.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS63WV1024BLL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BLI | 功能描述:静态随机存取存储器 1M (128Kx8) 12ns Async 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS63WV1024BLL-12BLI-TR | 功能描述:静态随机存取存储器 1M (128Kx8) 12ns Async 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS63WV1024BLL-12HI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
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