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参数资料
| 型号： | IS63LV1024L-8TI |
| 元件分类： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 8 ns, PDSO32 |
| 封装： | 0.400 INCH, TSOP2-32 |
| 文件页数： | 12/16页 |
| 文件大小： | 260K |
| 代理商： | IS63LV1024L-8TI |
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. M
01/29/2010
IS63LV1024
IS63LV1024L
AC TEST LOADS
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
3 ns
Input and Output Timing
1.5V
and Reference Levels
Output Load
See Figures 1 and 2
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-8 ns
-10 ns
-12 ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tRC
Read Cycle Time
8
—
10
—
12
—
ns
tAA
Address Access Time
—
8
—
10
—
12
ns
tOHA
Output Hold Time
2
—
2
—
2
—
ns
tACE
CE Access Time
—
8
—
10
—
12
ns
tDOE
OE Access Time
—
4
—
5
—
6
ns
tLZOE(2)
OE to Low-Z Output
0
—
0
—
0
—
ns
tHZOE(2)
OE to High-Z Output
0
4
0
5
0
6
ns
tLZCE(2)
CE to Low-Z Output
3
—
3
—
3
—
ns
tHZCE(2)
CE to High-Z Output
0
4
0
5
0
6
ns
tPU
CE to Power Up Time
0
—
0
—
0
—
ns
tPD
CE to Power Down Time
—
8
—
10
—
12
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
loading specified in Figure 1.
2. Tested with the loading specified in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Figure 1
OUTPUT
VT = 1.5V
ZOUT = 50
Ω
50
Ω
317
Ω
5 pF
Including
jig and
scope
351
Ω
OUTPUT
3.3V
Figure 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS63WV1024BLL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BLI | 功能描述:静态随机存取存储器 1M (128Kx8) 12ns Async 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS63WV1024BLL-12BLI-TR | 功能描述:静态随机存取存储器 1M (128Kx8) 12ns Async 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS63WV1024BLL-12HI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
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