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参数资料
| 型号： | IS63LV1024L-8TI |
| 元件分类： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 8 ns, PDSO32 |
| 封装： | 0.400 INCH, TSOP2-32 |
| 文件页数： | 14/16页 |
| 文件大小： | 260K |
| 代理商： | IS63LV1024L-8TI |
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev. M
01/29/2010
IS63LV1024
IS63LV1024L
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-8 ns
-10 ns
-12 ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
8
—
10
—
12
—
ns
tSCE
CE to Write End
7
—
7
—
8
—
ns
tAW
Address Setup Time to
8
—
8
—
8
—
ns
Write End
tHA
Address Hold from
0
—
0
—
0
—
ns
Write End
tSA
Address Setup Time
0
—
0
—
0
—
ns
tPWE
1
(1)
WE Pulse Width (OE High)
7
—
7
—
8
—
ns
tPWE
2
(2)
WE Pulse Width (OE Low)
8
—
10
—
12
—
ns
tSD
Data Setup to Write End
5
—
5
—
6
—
ns
tHD
Data Hold from Write End
0
—
0
—
0
—
ns
tHZWE(2)
WE LOW to High-Z Output
—
4
—
5
—
6
ns
tLZWE(2)
WE HIGH to Low-Z Output
3
—
3
—
3
—
ns
Notes:
1. Test conditions assume signal transition times of 3ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
AC WAVEFORMS
WRITE CYCLE NO. 1(1,2 (CE Controlled, OE = HIGH or LOW)
DATA UNDEFINED
t WC
VALID ADDRESS
t SCE
t PWE1
t PWE2
t AW
t HA
HIGH-Z
t HD
t SA
t HZWE
ADDRESS
CE
WE
DOUT
DIN
DATAIN VALID
t LZWE
t SD
CE_WR1.eps
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS63WV1024BLL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BLI | 功能描述:静态随机存取存储器 1M (128Kx8) 12ns Async 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS63WV1024BLL-12BLI-TR | 功能描述:静态随机存取存储器 1M (128Kx8) 12ns Async 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS63WV1024BLL-12HI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
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