参数资料
型号: ISD4003-08MEI
厂商: WINBOND ELECTRONICS CORP
元件分类: 音频合成
英文描述: 480 SEC, SPEECH SYNTHESIZER WITH RCDG, PDSO28
封装: 8 X 13.40 MM, PLASTIC, TSOP1-28
文件页数: 16/37页
文件大小: 392K
代理商: ISD4003-08MEI
23
ATmega165A/PA/325A/PA/3250A/PA/645A/P/6450A/P [DATASHEET]
8285E–AVR–02/2013
8.3.2
EEPROM write during power-down Sleep mode
When entering Power-down sleep mode while an EEPROM write operation is active, the EEPROM write operation
will continue, and will complete before the Write Access time has passed. However, when the write operation is
completed, the clock continues running, and as a consequence, the device does not enter Power-down entirely. It
is therefore recommended to verify that the EEPROM write operation is completed before entering Power-down.
8.3.3
Preventing EEPROM corruption
During periods of low V
CC, the EEPROM data can be corrupted because the supply voltage is too low for the CPU
and the EEPROM to operate properly. These issues are the same as for board level systems using EEPROM, and
the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First, a regular write
sequence to the EEPROM requires a minimum voltage to operate correctly. Secondly, the CPU itself can execute
instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can be done by
enabling the internal Brown-out Detector (BOD). If the detection level of the internal BOD does not match the
needed detection level, an external low V
CC reset Protection circuit can be used. If a reset occurs while a write
operation is in progress, the write operation will be completed provided that the power supply voltage is sufficient.
Assembly code example
EEPROM_read:
; Wait for completion of previous write
sbic
EECR,EEWE
rjmp
EEPROM_read
; Set up address (r18:r17) in address register
out
EEARH, r18
out
EEARL, r17
; Start eeprom read by writing EERE
sbi
EECR,EERE
; Read data from Data Register
in
r16,EEDR
ret
C code example
unsigned char
EEPROM_read(unsigned int uiAddress)
{
/* Wait for completion of previous write */
while(EECR & (1<<EEWE))
;
/* Set up address register */
EEAR = uiAddress;
/* Start eeprom read by writing EERE */
EECR |= (1<<EERE);
/* Return data from Data Register */
return EEDR;
}
相关PDF资料
PDF描述
ISD4003-08MSI 480 SEC, SPEECH SYNTHESIZER WITH RCDG, PDSO28
ISD4003-04MZD 240 SEC, SPEECH SYNTHESIZER WITH RCDG, PBGA19
ISD4003-04MZI 240 SEC, SPEECH SYNTHESIZER WITH RCDG, PBGA19
ISD4003-05MZD 300 SEC, SPEECH SYNTHESIZER WITH RCDG, PBGA19
ISD4003-05MZI 300 SEC, SPEECH SYNTHESIZER WITH RCDG, PBGA19
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