参数资料
型号: ISL1209IU10Z
厂商: Intersil
文件页数: 16/24页
文件大小: 0K
描述: IC RTC LP BATT BACK SRAM 10MSOP
标准包装: 80
类型: 时间事件记录器
特点: 警报器,闰年,SRAM
存储容量: 2B
时间格式: HH:MM:SS(12/24 小时)
数据格式: YY-MM-DD-dd
接口: I²C,2 线串口
电源电压: 2.7 V ~ 5.5 V
电压 - 电源,电池: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
供应商设备封装: 10-MSOP
包装: 管件
产品目录页面: 1245 (CN2011-ZH PDF)
23
FN6109.4
October 17, 2006
Below are some examples with equations to assist with
calculating backup times and required capacitance for the
ISL1209 device. The backup supply current plays a major
part in these equations, and a typical value was chosen for
example purposes. For a robust design, a margin of 30%
should be included to cover supply current and capacitance
tolerances over the results of the calculations. Even more
margin should be included if periods of very warm
temperature operation are expected.
Example 1. Calculating backup time given
voltages and capacitor value
In Figure 21, use CBAT = 0.47F and VDD = 5.0V. With VDD =
5.0V, the voltage at VBAT will approach 4.7V as the diode
turns off completely. The ISL1209 is specified to operate
down to VBAT = 1.8V. The capacitance charge/discharge
equation is used to estimate the total backup time:
Rearranging gives
CBAT is the backup capacitance and dV is the change in
voltage from fully charged to loss of operation. Note that
ITOT is the total of the supply current of the ISL1209 (IBAT)
plus the leakage current of the capacitor and the diode, ILKG.
In these calculations, ILKG is assumed to be extremely small
and will be ignored. If an application requires extended
operation at temperatures over 50°C, these leakages will
increase and hence reduce backup time.
Note that IBAT changes with VBAT almost linearly (see
Typical Performance Curves). This allows us to make an
approximation of IBAT, using a value midway between the
two endpoints. The typical linear equation for IBAT vs. VBAT
is:
Using this equation to solve for the average current given 2
voltage points gives:
Combining with Equation 2 gives the equation for backup
time:
where
CBAT = 0.47F
VBAT2 = 4.7V
VBAT1 = 1.8V
ILKG = 0 (assumed minimal)
Solving equation 4 for this example, IBATAVG = 4.387E-7 A
TBACKUP = 0.47 * (2.9) / 4.38E-7 = 3.107E6 sec
Since there are 86,400 seconds in a day, this corresponds to
35.96 days. If the 30% tolerance is included for capacitor
and supply current tolerances, then worst case backup time
would be:
CBAT = 0.70 * 35.96 = 25.2 days
Example 2. Calculating a capacitor value for a
given backup time
Referring to Figure 21 again, the capacitor value needs to be
calculated to give 2 months (60 days) of backup time, given
VDD = 5.0V. As in Example 1, the VBAT voltage will vary
from 4.7V down to 1.8V. We will need to rearrange Equation
2 to solve for capacitance:
Using the terms described above, this equation becomes:
where
TBACKUP = 60 days * 86,400 sec/day = 5.18 E6 sec
IBATAVG = 4.387 E-7 A (same as Example 1)
ILKG = 0 (assumed)
VBAT2 = 4.7V
VBAT1 = 1.8V
Solving gives
CBAT = 5.18 E6 * (4.387 E-7)/(2.9) = 0.784F
If the 30% tolerance is included for tolerances, then worst
case cap value would be
CBAT = 1.3 *.784 = 1.02F
FIGURE 21. SUPERCAPACITOR CHARGING CIRCUIT
2.7V to 5.5V
VDD
VBAT
GND
1N4148
CBAT
I = CBAT * dV/dT
(EQ. 1)
dT = CBAT * dV/ITOT to solve for backup time.
(EQ. 2)
IBAT = 1.031E-7*(VBAT) + 1.036E-7 Amps
(EQ. 3)
IBATAVG = 5.155E-8*(VBAT2 + VBAT1) + 1.036E-7 Amps
(EQ. 4)
TBACKUP = CBAT * (VBAT2 - VBAT1) / (IBATAVG + ILKG)
(EQ. 5)
seconds
CBAT = dT*I/dV
(EQ. 6)
CBAT = TBACKUP * (IBATAVG + ILKG)/(VBAT2 – VBAT1)
(EQ. 7)
ISL1209
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