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| 型号： | ISL6210CRZ |
| 厂商： | Intersil |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL SYNC 16QFN |
| 标准包装： | 75 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 26ns |
| 电流 - 峰： | 2A |
| 配置数： | 2 |
| 输出数： | 4 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN-EP（4x4） |
| 包装： | 管件 |
ISL6210
2.0
1.8
1.6
1.4
1.2
1.0
0.8
where the gate charge (Q G1 and Q G2 ) is defined at a
particular gate to source voltage (V GS1 and V GS2 ) in the
corresponding MOSFET data sheet; I Q is the driver ’s total
quiescent current with no load at both drive outputs; N Q1
and N Q2 are number of upper and lower MOSFETs,
respectively. The I Q V CC product is the quiescent power of
the driver without capacitive load and is typically negligible.
The total gate drive power losses are dissipated among the
0.6
0.4
0.2
20nC
Q GATE = 100nC
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
losses, the rest will be dissipated by the external gate
resistors (R G1 and R G2 , should be a short to avoid
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Δ V BOOT_CAP (V)
FIGURE 4. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
interfering with the operation shoot-through protection
circuitry) and the internal gate resistors (R GI1 and R GI2 ) of
MOSFETs. Figures 5 and 6 show the typical upper and lower
gate drives turn-on transition path. The power dissipation on
the driver can be roughly estimated as follows:
P DR_UP = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
? R HI1 + R EXT1 R LO1 + R EXT1 ?
P DR_LOW = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
? R HI2 + R EXT2 R LO2 + R EXT2 ?
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency (F SW ), the output drive impedance, the
external gate resistance, and the selected MOSFET’s
internal gate resistance and total gate charge. Calculating
the power dissipation in the driver for a desired application is
critical to ensure safe operation. Exceeding the maximum
P DR = P DR_UP + P DR_LOW + I Q ? VCC
? R HI1 R LO1 ? P Qg_Q1
? R HI2 R LO2 ? P Qg_Q2
2
2
(EQ. 6)
R EXT2 = R G1 + -------------
N
R EXT2 = R G2 + -------------
N
allowable power dissipation level will push the IC beyond the
maximum recommended operating junction temperature of
+125°C. The maximum allowable IC power dissipation for
R GI1
Q1
R GI2
Q2
the SO14 package is approximately 1W at room
temperature, while the power dissipation capacity in the
QFN packages, with an exposed heat escape pad, is around
2W. See “Layout Considerations” on page 9 for thermal
PVCC
BOOT
C GD
D
transfer improvement suggestions. When designing the
driver into an application, it is recommended that the
following calculation is used to ensure safe operation at the
R HI1
R LO1
UGATE
G
R G1
R GI1
C DS
desired frequency for the selected MOSFETs. The total gate
C GS
Q1
drive power losses due to the gate charge of MOSFETs and
the driver ’s internal circuitry and their corresponding average
driver current can be estimated with Equations 4 and 5,
respectively,
S
PHASE
FIGURE 5. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
P Qg_TOT = P Qg_Q1 + P Qg_Q2 + I Q ? VCC
(EQ. 4)
P Qg_Q1 = --------------------------------------- ? F SW ? N Q1
Q G1 ? PVCC 2
V GS1
PVCC
D
P Qg_Q2 = --------------------------------------- ? F SW ? N Q2
Q G2 ? PVCC 2
V GS2
R HI2
LGATE
G
C GD
C DS
R LO2
R G2
R GI2
I DR = ? ------------------------------ + ------------------------------ ? ? F SW + I Q
? Q G1 ? N Q1 Q G2 ? N Q2 ?
? V GS1 V GS2 ?
(EQ. 5)
GND
C GS
S
Q2
FIGURE 6. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
8
FN6392.1
December 9, 2008
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