参数资料
| 型号： | ISL6217CVZ-T |
| 厂商： | Intersil |
| 文件页数： | 17/19页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWM INTEL PENT 38-TSSOP |
| 标准包装： | 2,500 |
| 应用： | 控制器，Intel Pentium? IMVP-IV，IMVP+ |
| 输入电压： | 5.5 V ~ 25 V |
| 输出数： | 1 |
| 工作温度： | -10°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 38-TFSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 38-TSSOP |
| 包装： | 带卷 (TR) |
ISL6217
for the converter and find the intersection of this value and
the active channel curve. The worst case duty cycle is
defined as the maximum operating CORE output voltage
divided by the minimum operating battery voltage. Find the
corresponding y-axis value, which is the current multiplier.
Multiply the total full load output current, not the channel
value, by the current multiplier value found, and the result is
the RMS input current which must be supported by the input
capacitors.
FIGURE 13. INPUT RMS RIPPLE CURRENT MULTIPLIER
MOSFET Selection and Considerations
For the Intel IMVP-IV? and IMVP-IV+? application, which
requires up to 25 amps of current, it is suggested that 2
channel operation with (3) MOSFETs per channel be
implemented. This configuration would be: (1) High
Switching Frequency, Low Gate Charge MOSFET for the
Upper, and (2) Low rDSON MOSFETs for the Lowers.
In high-current PWM applications, the MOSFET power
dissipation, package selection and heatsink are the
dominant design factors. The power dissipation includes
two loss components: conduction loss and switching loss.
These losses are distributed between the upper and lower
MOSFETs according to duty cycle of the converter. Refer
to the PUPPER and PLOWER equations below. The
conduction losses are the main component of power
dissipation for the lower MOSFETs. Only the upper
MOSFETs have significant switching losses, since the
lower devices turn on and off into near zero voltage. The
following equations assume linear voltage-current
transitions and do not model power loss due to the reverse-
recovery of the lower MOSFETs body diode. The gate-
charge losses are dissipated in the ISL6217 drivers and do
not heat the MOSFETs; however, large gate-charge
increases the switching time tSW, which increases the
upper MOSFET switching losses. Ensure that both
MOSFETs are within their maximum junction temperature,
at high ambient temperature, by calculating the
temperature rise according to package thermal-resistance
specifications.
P LOWER =
I O 2 × r DS ( ON ) × ( V IN ? V OUT )
V IN
(EQ. 10)
I × V IN × t SW × F SW
P UPPER =
I O 2 × r DS ( ON ) × V OUT
V IN
+ O
2
(EQ. 11)
17
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6217EVAL2 | 制造商:Intersil Corporation 功能描述:PURCHASE ISL6216EVAL1, ISL6217EVAL2 OR ISL6218EVAL2 WITH IS - Bulk |
| ISL6218 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Precision Single-Phase Buck PWM Controller for Intel Mobile Voltage Positioning IMVP-IV and IMVP-IV |
| ISL6218CRZ | 功能描述:电流型 PWM 控制器 P6 MULTIPHS BUCK PWM CNTRLR FOR IMVP4 RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| ISL6218CRZ-T | 功能描述:电流型 PWM 控制器 P6 MULTIPHS BUCK PWM CNTRLR FOR IMVP4 RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| ISL6218CV | 功能描述:IC CTRLR INTEL PENT M 38-TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 应用说明:Ultrasound Imaging Systems Application Note 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:37 系列:- 应用:医疗用超声波成像，声纳 电流 - 电源:- 电源电压:2.37 V ~ 6 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:56-WFQFN 裸露焊盘 供应商设备封装:56-TQFN-EP（8x8） 包装:管件 |
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