参数资料
型号: ISL6263CHRZ-T
厂商: Intersil
文件页数: 12/18页
文件大小: 0K
描述: IC VOLT REG 1PH 5BIT VID 32-QFN
标准包装: 6,000
应用: 转换器,GPU 内核电源
输入电压: 5 V ~ 25 V
输出数: 1
输出电压: 0.41 V ~ 1.29 V
工作温度: -10°C ~ 100°C
安装类型: 表面贴装
封装/外壳: 32-VFQFN 裸露焊盘
供应商设备封装: 32-QFN(5x5)
包装: 带卷 (TR)
ISL6263C
For example, choose V ICOMP(max) - V O = 80mV. R OCSET
can use a 8.06k ? resistor, according to Equation 2.
TABLE 3. FAULT PROTECTION SUMMARY OF
ISL6263C (Continued)
UVP and OVP are independent of the OCP. If the output
voltage measured on the VO pin is less than +300mV below
the voltage on the SOFT pin for longer than 1ms, the
FAULT TYPE
FAULT
DURATION
PRIOR TO
PROTECTION
PROTECTION
ACTIONS
FAULT
RESET
controller will latch a UVP fault. If the output voltage
measured on the VO pin is >195mV above the voltage on
the SOFT pin for longer than 1ms, the controller will latch an
OVP fault. Keep in mind that V SOFT will equal the voltage
level commanded by the VID states only after the soft-start
capacitor C SOFT has slewed to the VID DAC output voltage.
The UVP and OVP detection circuits act on static and
dynamic V SOFT voltage.
When an OCP, OVP, or UVP fault has been latched, PGOOD
Severe
Overvoltage
(+1.55V)
between VO pin
and VSS pin
Undervoltage
(-300mV)
between VO pin
Immediately
1ms
UGATE, and Cycle
PGOOD latched low, VDD only
LGATE toggles ON
when VO > 1.55V
OFF when
VO < 0.77V
until fault reset
LGATE, UGATE, and Cycle
PGOOD latched low VR_ON or
VDD
becomes a low impedance and the gate driver outputs
UGATE and LGATE are pulled low. The energy stored in the
inductor is dissipated as current flows through the low-side
MOSFET body diode. The controller will remain latched in
the fault state until the VR_ON pin has been pulled below the
falling VR_ON threshold voltage V VR_ONL or until VDD has
gone below the falling POR threshold voltage VVDD_THF .
A severe-overvoltage protection fault occurs immediately after
the voltage between the VO and VSS pins exceed the rising
severe-overvoltage threshold V OVPS which is 1.545V, the
same reference voltage used by the VID DAC. The ISL6263C
will latch UGATE and PGOOD low but unlike other protective
faults, LGATE remains high until the voltage between VO and
VSS falls below approximately 0.77V, at which time LGATE is
pulled low. The LGATE pin will continue to switch high and low
at 1.545V and 0.77V until VDD has gone below the falling
POR threshold voltage VVDD_THF. This provides maximum
protection against a shorted high-side MOSFET while
preventing the output voltage from ringing below ground. The
severe-overvoltage fault circuit can be triggered after another
and SOFT pin
Gate-Driver Outputs LGATE and UGATE
The ISL6263C has internal high-side and low-side
N-Channel MOSFET gate-drivers. The LGATE driver is
optimized for low duty-cycle applications where the low-side
MOSFET conduction losses are dominant. The LGATE
pull-down resistance is very low in order to clamp the
gate-source voltage of the MOSFET below the V GS(th) at
turn-off. The current transient through the low-side gate at
turn-off can be considerable due to the characteristic large
switching charge of a low r DS(ON) MOSFET.
PWM
LGATE
1V
fault has already been latched.
TABLE 3. FAULT PROTECTION SUMMARY OF
ISL6263C
FAULT
DURATION
UGATE
t PDRU
t PDRL
1V
FAULT TYPE
PRIOR TO
PROTECTION
PROTECTION
ACTIONS
FAULT
RESET
FIGURE 6. GATE DRIVER TIMING DIAGRAM
Overcurrent
Short Circuit
Overvoltage
(+195mV)
between VO pin
and SOFT pin
120μs
<2μs
1ms
LGATE, UGATE, and Cycle
PGOOD latched low VR_ON or
VDD
LGATE, UGATE, and Cycle
PGOOD latched low VR_ON or
VDD
LGATE, UGATE, and Cycle
PGOOD latched low VR_ON or
VDD
Adaptive shoot-through protection prevents the gate-driver
outputs from going high until the opposite gate-driver output
has fallen below approximately 1V. The UGATE turn-on
propagation delay t PDRU and LGATE turn-on propagation
delay t PDRL are found in the “Electrical Specifications” table
on page 6. The power for the LGATE gate-driver is sourced
directly from the PVCC pin. The power for the UGATE
gate-driver is sourced from a boot-strap capacitor connected
across the BOOT and PHASE pins. The boot capacitor is
charged from PVCC through an internal boot-strap diode
each time the low-side MOSFET turns on, pulling the
PHASE pin low.
12
FN6745.1
July 8, 2010
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