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| 型号： | ISL6322GCRZ |
| 厂商： | Intersil |
| 文件页数： | 21/39页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWM BUCK 48-QFN |
| 标准包装： | 43 |
| 应用： | 控制器，Intel VR10、VR11、AMD CPU |
| 输入电压： | 5 V ~ 12 V |
| 输出数： | 1 |
| 输出电压： | 0.38 V ~ 1.99 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 48-VFQFN 裸露焊盘 |
| 供应商设备封装： | 48-QFN（7x7） |
| 包装： | 管件 |
| 产品目录页面： | 1248 (CN2011-ZH PDF) |
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ISL6322G
1k Ω resistor between the DAC and the REF pin, and the
external capacitor C REF , between the REF pin and ground.
For AMD VID transitions C REF should be a 1000pF
capacitor.
User Selectable Adaptive Deadtime Control
Techniques
The ISL6322G integrated drivers incorporate two different
adaptive deadtime control techniques, which the user can
choose between. Both of these control techniques help to
minimize deadtime, resulting in high efficiency from the reduced
freewheeling time of the lower MOSFET body-diode
conduction, and both help to prevent the upper and lower
MOSFETs from conducting simultaneously. This is
accomplished by ensuring either rising gate turns on its
MOSFET with minimum and sufficient delay after the other has
turned off.
The difference between the two adaptive deadtime control
Once the PHASE is high, the advanced adaptive
shoot-through circuitry monitors the PHASE and UGATE
voltages during a PWM falling edge and the subsequent
UGATE turn-off. If either the UGATE falls to less than 1.75V
above the PHASE or the PHASE falls to less than +0.8V, the
LGATE is released to turn-on.
Internal Bootstrap Device
All three integrated drivers feature an internal bootstrap
schottky diode. Simply adding an external capacitor across
the BOOT and PHASE pins completes the bootstrap circuit.
The bootstrap function is also designed to prevent the
bootstrap capacitor from overcharging due to the large
negative swing at the PHASE node. This reduces voltage
stress on the boot to phase pins.
The bootstrap capacitor must have a maximum voltage
rating above PVCC + 4V and its capacitance value can be
chosen from Equation 13:
C BOOT_CAP ≥ --------------------------------------
Q GATE = ---------------------------------- ? N Q1
techniques is the method in which they detect that the lower
MOSFET has transitioned off in order to turn on the upper
MOSFET. The state of the internal I 2 C registers determines
which of the two control techniques is active (refer beginning
on page 27 for details of controlling deadtime control with
I 2 C). The default setting is PHASE Detect. If the PHASE
Q GATE
Δ V BOOT_CAP
Q G1 ? PVCC
V GS1
(EQ. 13)
Detect Scheme is chosen, the voltage on the PHASE pin is
monitored to determine if the lower MOSFET has
transitioned off or not. Choosing the LGATE Detect Scheme
instructs the controller to monitor the voltage on the LGATE
pin to determine if the lower MOSFET has turned off or not.
For both schemes, the method for determining whether the
upper MOSFET has transitioned off in order to signal to turn
on the lower MOSFET is the same.
PHASE DETECT
For the PHASE detect scheme, during turn-off of the lower
MOSFET, the PHASE voltage is monitored until it reaches a
-0.3V/+0.8V (forward/reverse inductor current). At this time the
where Q G1 is the amount of gate charge per upper MOSFET
at V GS1 gate-source voltage and N Q1 is the number of
control MOSFETs. The Δ V BOOT_CAP term is defined as the
allowable droop in the rail of the upper gate drive.
1.6
1.4
1.2
1.0
0.8
UGATE is released to rise. An auto-zero comparator is used to
correct the r DS(ON) drop in the phase voltage preventing false
detection of the -0.3V phase level during r DS(ON) conduction
period. In the case of zero current, the UGATE is released after
35ns delay of the LGATE dropping below 0.5V. When LGATE
0.6
0.4
0.2
20nC
Q GATE = 100nC
50nC
first begins to transition low, this quick transition can disturb the
PHASE node and cause a false trip, so there is 20ns of
blanking time once LGATE falls until PHASE is monitored.
Once the PHASE is high, the advanced adaptive
shoot-through circuitry monitors the PHASE and UGATE
voltages during a PWM falling edge and the subsequent
UGATE turn-off. If either the UGATE falls to less than 1.75V
above the PHASE or the PHASE falls to less than +0.8V, the
LGATE is released to turn-on.
LGATE DETECT
For the LGATE detect scheme, during turn-off of the lower
MOSFET, the LGATE voltage is monitored until it reaches
1.75V. At this time the UGATE is released to rise.
21
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Δ V BOOT_CAP (V)
FIGURE 9. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
Gate Drive Voltage Versatility
The ISL6322G provides the user flexibility in choosing the
gate drive voltage for efficiency optimization. The controller
ties the upper and lower drive rails together. Simply applying
a voltage from 5V up to 12V on PVCC sets both gate drive
rail voltages simultaneously.
FN6715.0
May 22, 2008
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6322GCRZ-T | 功能描述:IC CTRLR PWM BUCK 48-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
| ISL6322GIRZ | 功能描述:IC CTRLR PWM BUCK 48-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:2,000 系列:- 应用:控制器，DSP 输入电压:4.5 V ~ 25 V 输出数:2 输出电压:最低可调至 1.2V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:30-TFSOP（0.173"，4.40mm 宽） 供应商设备封装:30-TSSOP 包装:带卷 (TR) |
| ISL6322GIRZ-T | 功能描述:IC CTRLR PWM BUCK 48-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
| ISL6322IRZ | 功能描述:IC CTRLR PWM 4PHASE BUCK 48-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| ISL6322IRZ-T | 功能描述:IC CTRLR PWM 4PHASE BUCK 48-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
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