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参数资料
| 型号： | ISL6504CBZ-T |
| 厂商： | Intersil |
| 文件页数： | 13/16页 |
| 文件大小： | 0K |
| 描述： | IC PWR SUPPLY CTRLR/MONTR 16SOIC |
| 标准包装： | 1,000 |
| 应用： | 电源控制器/监控器 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 电流 - 电源： | 17mA |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 带卷 (TR) |
ISL6504, ISL6504A
r DS ( ON ) max = --------------------------------------------------- , where
Q1
The NPN transistor used as sleep state pass element on the
3.3V DUAL output has to have a minimum current gain of 100
at 1.5V V CE and 650mA I CE throughout the in-circuit
operating temperature range. For larger current ratings on
the 3.3V DUAL output (providing the ATX 5V SB output rating
is equally extended), selection criteria for Q1 include an
appropriate current gain (h fe ) and saturation characteristics.
Q2, Q4
These N-Channel MOSFETs are used to switch the 3.3V
and 5V inputs provided by the ATX supply into the
3.3V DUAL /3.3V SB and 5V DUAL outputs while in active (S0,
S1) state. The main criteria for the selection of these
transistors is output voltage budgeting. The maximum
r DS(ON) allowed at highest junction temperature can be
expressed with the following equation:
V INmin – V OUTmin
I OUTmax
V INmin - minimum input voltage
V OUTmin - minimum output voltage allowed
I OUTmax - maximum output current
Q3
If a P-Channel MOSFET is used to switch the 5V SB output of
the ATX supply into the 5V DUAL output during sleep states,
then the selection criteria of this device is proper voltage
budgeting. The maximum r DS(ON) , however, has to be
achieved with only 4.5V of gate-to-source voltage, so a logic
level MOSFET needs to be selected. If a PNP device is
chosen to perform this function, it has to have a low-
saturation voltage while providing the maximum sleep
current and have a current gain sufficiently high to be
saturated using the minimum drive current (typically 20mA).
ISL6504 Application Circuit
Figure 12 shows a typical application circuit for the
ISL6504/A. The circuit provides the 3.3V DUAL /3.3V SB
voltage, the ICH4 resume well 1.5V SB voltage, the 1.2V VID
voltage identification output, and the 5V DUAL
keyboard/mouse voltage from +3.3V, +5V SB , +5V, and
+12VDC ATX supply outputs. Q3 can also be a PNP
transistor, such as an MMBT2907AL. For additional, more
detailed information on the circuit, including a Bill-of-
Materials and circuit board description, see Application Note
AN1001. Also see Intersil Corporation’s web page
(www.intersil.com).
+5VIN
+12VIN
+3.3VIN
+5VSB
R1
1k
5VSB
16
C1
1mF
3V3
5
14
VID_PG
‘VID PGOOD’
C4
Q2
HUF76113T3S
+3.3VDUAL/3.3VSB
+
330mF
3V3DLSB
Q1
2SD1802
3V3DL
2
3
U1
15
4
VID_CT
C2
0.1mF
1V2VID
C3 +
10mF
R2
10k
+1.2VVID
ISL6504/A
C5
‘FAULT’
+1.5VSB
+
10mF
R3
1k
FAULT
1V5SB
9
1
11
10
5VDLSB
DLA
Q3
FDV304P
Q4
HUF76113T3S
S3
S5
C7
0.1mF
S3
S5
SS
6
7
13
8
GND
12
5VDL
+
C6
220mF
+5VDUAL
FIGURE 12. TYPICAL ISL6504/A APPLICATION DIAGRAM
13
FN9062.2
April 13, 2004
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6504CR | 功能描述:IC MULTIPLE POWER CTRLR 20-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 电源控制器，监视器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 应用:多相控制器 输入电压:- 电源电压:9 V ~ 14 V 电流 - 电源:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:40-WFQFN 裸露焊盘 供应商设备封装:40-TQFN-EP（5x5） 包装:带卷 (TR) |
| ISL6504CR-T | 功能描述:IC MULTIPLE POWER CTRLR 20-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 电源控制器，监视器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 应用:多相控制器 输入电压:- 电源电压:9 V ~ 14 V 电流 - 电源:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:40-WFQFN 裸露焊盘 供应商设备封装:40-TQFN-EP（5x5） 包装:带卷 (TR) |
| ISL6505 WAF | 制造商:Intersil Corporation 功能描述: |
| ISL6505C WAF | 制造商:Intersil Corporation 功能描述: |
| ISL6505CB | 功能描述:IC MULTIPLE POWER CTRLR 20-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 电源控制器，监视器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 应用:多相控制器 输入电压:- 电源电压:9 V ~ 14 V 电流 - 电源:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:40-WFQFN 裸露焊盘 供应商设备封装:40-TQFN-EP（5x5） 包装:带卷 (TR) |
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