参数资料
型号: ISL6524CBZ
厂商: Intersil
文件页数: 14/16页
文件大小: 0K
描述: IC CTLR VRM8.5 PWM TRPL 28-SOIC
标准包装: 26
应用: 控制器,Intel VRM8.5
输入电压: 10.8 V ~ 13.2 V
输出数: 4
输出电压: 多重
工作温度: 0°C ~ 70°C
安装类型: *
封装/外壳: 28-SOIC(0.295",7.50mm 宽)
供应商设备封装: *
包装: 管件
产品目录页面: 1244 (CN2011-ZH PDF)
+12V
VCC
+5V OR LESS
Linear Controllers Transistor Selection
The ISL6524 linear controllers are compatible with both NPN
bipolar as well as N-channel MOSFET transistors. The main
criteria for selection of pass transistors for the linear
ISL6524
UGATE
PHASE
Q1
NOTE:
V GS ≈ V CC -5V
regulators is package selection for efficient removal of heat.
The power dissipated in a linear regulator is
P LINEAR = I O × ( V IN – V OUT )
-
+
LGATE
PGND
Q2
CR1
NOTE:
V GS ≈ V CC
Select a package and heatsink that maintains the junction
temperature below the maximum desired temperature with
the maximum expected ambient temperature.
GND
FIGURE 13. UPPER GATE DRIVE - DIRECT V CC DRIVE
Rectifier CR1 is a clamp that catches the negative inductor
swing during the dead time between the turn off of the lower
MOSFET and the turn on of the upper MOSFET. For best
results, the diode must be a surface-mount Schottky type to
prevent the parasitic MOSFET body diode from conducting. It
is acceptable to omit the diode and let the body diode of the
lower MOSFET clamp the negative inductor swing, but one
must ensure the PHASE node negative voltage swing does
not exceed -3V to -5V peak. The diode's rated reverse
breakdown voltage must be equal or greater to 1.5 times the
maximum input voltage.
14
When selecting bipolar NPN transistors for use with the
linear controllers, insure the current gain at the given
operating V CE is sufficiently large to provide the desired
output load current when the base is fed with the minimum
driver output current.
In order to ensure the strict timing/level requirement of
OUT4, an NPN transistor is recommended for use as a pass
element on this output (Q5). A low gate threshold NMOS
could be used, but meeting the requirements would then
depend on the VCC bias being sufficiently high to allow
control of the MOSFET.
FN9015.3
April 18, 2005
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