参数资料
型号: ISL6563CR-T
厂商: Intersil
文件页数: 5/19页
文件大小: 0K
描述: IC CTRLR PWM MULTIPHASE 24-QFN
标准包装: 6,000
应用: 控制器,Intel VRM9,VRM10,AMD Hammer 应用
输入电压: 5 V ~ 12 V
输出数: 1
输出电压: 0.8 V ~ 1.85 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 24-VFQFN 裸露焊盘
供应商设备封装: 24-QFN(4x4)
包装: 带卷 (TR)
ISL6563
Electrical Specifications
Test Conditions: V CC = 5V, T J = 0°C to +85°C, Unless Otherwise Specified. (Continued)
MIN
MAX
PARAMETER
TEST CONDITIONS
(Note 7)
TYP
(Note 7) UNITS
OVERCURRENT PROTECTION
Overcurrent Trip Level
-
95
-
μA
PROTECTION
Overvoltage Threshold while IC Disabled
Overvoltage Threshold
Overvoltage Hysteresis
VRM9.0 configuration
Hammer and VRM10.0 configurations
FB Rising
1.90
1.60
-
-
1.95
1.65
VID +200mV
100
2.00
1.70
-
-
V
V
V
mV
SWITCHING TIME
UGATE Rise Time (Note 6)
LGATE Rise Time (Note 6)
UGATE Fall Time (Note 6)
LGATE Fall Time (Note 6)
UGATE Turn-On Non-overlap (Note 6)
LGATE Turn-On Non-overlap (Note 6)
t RUGATE; V VCC = 5V, 3nF Load
t RLGATE; V VCC = 5V, 3nF Load
t FUGATE; V VCC = 5V, 3nF Load
t FLGATE; V VCC = 5V, 3nF Load
t PDHUGATE ; V VCC = 5V, 3nF Load
t PDHLGATE ; V VCC = 5V, 3nF Load
-
-
-
-
-
-
8
8
8
4
8
8
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
OUTPUT
Upper Drive Source Resistance
Upper Drive Sink Resistance
Lower Drive Source Resistance
Lower Drive Sink Resistance
100mA Source Current
100mA Sink Current
100mA Source Current
100mA Sink Current
-
-
-
-
0.5
0.4
0.5
0.3
1.3
1.0
1.3
1.0
Ω
Ω
Ω
Ω
NOTES:
5. Parameter magnitude at T J = -40°C determined through characterization.
6. Limits should be considered typical and are not production tested.
7. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
Timing Diagram
t PDHUGATE
UGATE
LGATE
t FLGATE
5
t RUGATE
t FUGATE
t PDHLGATE
t RLGATE
FN9126.8
June 10, 2010
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