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| 型号： | ISL6605CRZ-T |
| 厂商： | Intersil |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8-QFN |
| 标准包装： | 6,000 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 33V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VQFN 裸露焊盘 |
| 供应商设备封装： | 8-QFN（3x3） |
| 包装： | 带卷 (TR) |
OMM 09
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Data Sheet PR O D U C T
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RSIL REC -I SL66
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May 9, 2006
ISL6605
FN9091.7
Synchronous Rectified MOSFET Driver
The ISL6605 is a high frequency, MOSFET driver optimized
to drive two N-Channel power MOSFETs in a synchronous-
rectified buck converter topology. This driver combined with
an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM
controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V) and
minimizes low driver switching losses for high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3000pF load with an 8ns
propagation delay and less than 10ns transition time. This
product implements bootstrapping on the upper gate with an
internal bootstrap Schottky diode, reducing implementation
cost, complexity, and allowing the use of higher
performance, cost effective N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
The ISL6605 features 4A typical sink current for the lower
gate driver, which is capable of holding the lower MOSFET
gate during the Phase node rising edge to prevent shoot-
through power loss caused by the high dv/dt of the Phase
node.
The ISL6605 also features a Three-State PWM input that,
working together with Intersil multi-phase PWM controllers,
will prevent a negative transient on the output voltage when
the output is being shut down. This feature eliminates the
Schottky diode that is usually seen in a microprocessor
power system for protecting the microprocessor from
reversed-output-voltage damage.
Features
? Drives Two N-Channel MOSFETs
? Adaptive Shoot-Through Protection
? 0.4 Ω On-Resistance and 4A Sink Current Capability
? Supports High Switching Frequency
- Fast Output Rise and Fall Time
- Ultra Low Propagation Delay 8ns
? Three-State PWM Input for Power Stage Shutdown
? Internal Bootstrap Schottky Diode
? Low Bias Supply Current (5V, 30μA)
? Enable Input
? QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
? Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
? Core Voltage Supplies for Intel? and AMD?
Microprocessors
? High Frequency Low Profile DC/DC Converters
? High Current Low Voltage DC/DC Converters
? Synchronous Rectification for Isolated Power Supplies
Related Literature
? Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Pinouts
UGATE 1
ISL6605
(8 LD SOIC)
TOP VIEW
8
PHASE
ISL6605
(8 LD QFN)
TOP VIEW
BOOT 2
PWM 3
GND 4
7
6
5
EN
VCC
LGATE
BOOT 1
8
7
6 6 EN
PWM 2
3
4
5 VCC
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright ? Intersil Americas Inc. 2002-2006. All Rights Reserved
Intel? is a registered trademark of Intel Corporation. AMD? is a registered trademark of Advanced Micro Devices, Inc.
All other trademarks mentioned are the property of their respective owners.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6605CRZ-TK | 功能描述:IC MOSFET DVR SYNC BUCK 8QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6605IB | 功能描述:功率驱动器IC MOSFET DUAL SYNC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6605IB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6605IBZ | 功能描述:IC DRIVER MOSFET DUAL SYNC 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:95 系列:- 配置:半桥 输入类型:PWM 延迟时间:25ns 电流 - 峰:1.6A 配置数:1 输出数:2 高端电压 - 最大（自引导启动）:118V 电源电压:9 V ~ 14 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1282 (CN2011-ZH PDF) 其它名称:*LM5104M*LM5104M/NOPBLM5104M |
| ISL6605IBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
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