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参数资料
| 型号： | ISL6605CRZ-T |
| 厂商： | Intersil |
| 文件页数： | 4/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8-QFN |
| 标准包装： | 6,000 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 33V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VQFN 裸露焊盘 |
| 供应商设备封装： | 8-QFN（3x3） |
| 包装： | 带卷 (TR) |
ISL6605
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V EN , V PWM ) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (V BOOT ). . . . . . . -0.3V to 22V (DC) or 33V (<200ns)
BOOT To PHASE Voltage (V BOOT-PHASE ) . . . . . . . . . . -0.3V to 7V
PHASE Voltage . . . . . . . . . . . . . . GND - 0.3V (DC) to 28V (<200ns)
. . . . . . . . . . GND - 5V (<100ns Pulse Width, 10 μ J) to 28V (<200ns)
UGATE Voltage . . . . . . . . . . . V PHASE - 0.3V (DC) to V BOOT +0.3V
. . . . . . . V PHASE - 4V (<200ns Pulse Width, 20 μ J) to V BOOT +0.3V
LGATE Voltage . . . . . . . . . . . . . . GND - 0.3V (DC) to V VCC + 0.3V
. . . . . . . . . . . GND - 2V (<100ns Pulse Width, 4 μ J) to V VCC + 0.3V
Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to 125°C
ESD Rating
HBM Class 1 JEDEC STD
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . -40°C to 85°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ± 10%
Thermal Information
Thermal Resistance (Notes 1, 2, & 3) θ JA (°C/W) θ JC (°C/W)
SOIC Package (Note 1) . . . . . . . . . . . . 110 N/A
QFN Package (Notes 2, 3). . . . . . . . . . 95 36
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
3. θ JC , "case temperature" location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.
Electrical Specifications
These specifications apply for T A = -40 ° C to 85°C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
Bias Supply Current
I VCC
I VCC
EN = LOW, T A = 0°C to 70°C
EN = LOW, T A = -40°C to 85°C
PWM pin floating, V VCC = 5V
-
-
-
-
-
30
1.5
2
-
μ A
μ A
μ A
PWM INPUT
Input Current
PWM Three-State Rising Threshold
PWM Three-State Falling Threshold
Three-State Shutdown Holdoff Time
I PWM
V PWM = 5V
V PWM = 0V
V VCC = 5V, T A = 0°C to 70°C
V VCC = 5V, T A = -40°C to 85°C
V VCC = 5V
V VCC = 5V, temperature = 25°C
-
-
-
-
3.3
-
250
-250
-
-
-
420
-
-
1.70
1.75
-
-
μ A
μ A
V
V
V
ns
EN INPUT
EN LOW Threshold
EN HIGH Threshold
1.0
-
-
-
-
2.0
V
V
SWITCHING TIME
UGATE Rise Time
LGATE Rise Time
UGATE Fall Time
LGATE Fall Time
UGATE Turn-Off Propagation Delay
LGATE Turn-Off Propagation Delay
t RUGATE
t RLGATE
t FUGATE
t FLGATE
t PDLUGATE
t PDLLGATE
V VCC = 5V, 3nF Load
V VCC = 5V, 3nF Load
V VCC = 5V, 3nF Load
V VCC = 5V, 3nF Load
V VCC = 5V, 3nF Load
V VCC = 5V, 3nF Load
-
-
-
-
-
-
8
8
8
4
8
8
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
OUTPUT
Upper Drive Source Resistance
Upper Driver Source Current (Note 4)
Upper Drive Sink Resistance
Upper Driver Sink Current (Note 4)
Lower Drive Source Resistance
Lower Driver Source Current (Note 4)
Lower Drive Sink Resistance
Lower Driver Sink Current (Note 4)
R UGATE
I UGATE
R UGATE
I UGATE
R LGATE
I LGATE
R LGATE
I LGATE
500mA Source Current
V UGATE-PHASE = 2.5V
500mA Sink Current
V UGATE-PHASE = 2.5V
500mA Source Current
V LGATE = 2.5V
500mA Sink Current
V LGATE = 2.5V
-
-
-
-
-
-
-
-
1.0
2.0
1.0
2.0
1.0
2.0
0.4
4.0
2.5
-
2.5
-
2.5
-
1.0
-
Ω
A
Ω
A
Ω
A
Ω
A
NOTE:
4. Guaranteed by design. Not 100% tested in production.
4
FN9091.7
May 9, 2006
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