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参数资料
| 型号： | ISL6605CRZ-T |
| 厂商： | Intersil |
| 文件页数： | 6/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8-QFN |
| 标准包装： | 6,000 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 33V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VQFN 裸露焊盘 |
| 供应商设备封装： | 8-QFN（3x3） |
| 包装： | 带卷 (TR) |
ISL6605
1.4
1.2
1.0
Q GATE = 100 nC
Q GATE =100nC
50nC
50nC
20nC
0.2
20nC
C BOOT ≥ ------------------------
This driver is optimized for voltage regulators with large step
down ratio. The lower MOSFET is usually sized much larger
compared to the upper MOSFET because the lower
MOSFET conducts for a much longer time in a switching
period. The lower gate driver is therefore sized much larger
to meet this application requirement. The 0.4 Ω on-resistance
and 4A sink current capability enable the lower gate driver to
absorb the current injected to the lower gate through the
drain-to-gate capacitor of the lower MOSFET and prevent a
shoot through caused by the high dv/dt of the phase node.
Three-State PWM Input
A unique feature of the ISL6605 and other Intersil drivers is
the addition of a shutdown window to the PWM input. If the
PWM signal enters and remains within the shutdown window
for a set holdoff time, the output drivers are disabled and
both MOSFET gates are pulled and held low. The shutdown
state is removed when the PWM signal moves outside the
shutdown window. Otherwise, the PWM rising and falling
thresholds outlined in the ELECTRICAL SPECIFICATIONS
determine when the lower and upper gates are enabled.
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection
to prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to rise.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 1V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the upper MOSFET gate voltage during UGATE
turn-off. Once the upper MOSFET gate-to-source voltage
has dropped below a threshold of 1V, the LGATE is allowed
to rise.
Internal Bootstrap Diode
This driver features an internal bootstrap Schottky diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit.The bootstrap
capacitor can be chosen from the following equation:
Q GATE
Δ V BOOT
where Q GATE is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The Δ V BOOT term is
defined as the allowable droop in the rail of the upper drive.
The above relationship is illustrated in Figure 1.
As an example, suppose an upper MOSFET has a gate
charge, Q GATE , of 65nC at 5V and also assume the droop in
the drive voltage over a PWM cycle is 200mV. One will find
that a bootstrap capacitance of at least 0.125 μ F is required.
6
The next larger standard value capacitance is 0.15 μ F. A
good quality ceramic capacitor is recommended.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.0
0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Δ V BOOT (V)
FIGURE 1. BOOTSTRAP CAPACITANCE vs. BOOT RIPPLE
VOLTAGE
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction temperature of 125°C. The maximum
allowable IC power dissipation for the SO-8 package is
approximately 800mW. When designing the driver into an
application, it is recommended that the following calculation
be performed to ensure safe operation at the desired
frequency for the selected MOSFETs. The power dissipated
by the driver is approximated as below and plotted as in
Figure 2.
P = f sw ( 1.5V U Q U + V L Q L ) + I DDQ V CC
where f sw is the switching frequency of the PWM signal. V U
and V L represent the upper and lower gate rail voltage. Q U
and Q L are the upper and lower gate charge determined by
MOSFET selection and any external capacitance added to
the gate pins. The I DDQ V CC product is the quiescent power
of the driver and is typically negligible.
FN9091.7
May 9, 2006
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相关代理商/技术参数 |
参数描述 |
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| ISL6605CRZ-TK | 功能描述:IC MOSFET DVR SYNC BUCK 8QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6605IB | 功能描述:功率驱动器IC MOSFET DUAL SYNC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6605IB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6605IBZ | 功能描述:IC DRIVER MOSFET DUAL SYNC 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:95 系列:- 配置:半桥 输入类型:PWM 延迟时间:25ns 电流 - 峰:1.6A 配置数:1 输出数:2 高端电压 - 最大（自引导启动）:118V 电源电压:9 V ~ 14 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1282 (CN2011-ZH PDF) 其它名称:*LM5104M*LM5104M/NOPBLM5104M |
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