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参数资料
| 型号： | ISL6609AIRZ-TK |
| 厂商： | Intersil |
| 文件页数： | 7/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR SYNC RECT 8-QFN |
| 标准包装： | 1 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 18ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VQFN 裸露焊盘 |
| 供应商设备封装： | 8-QFN（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1248 (CN2011-ZH PDF) |
| 其它名称： | ISL6609AIRZ-TKDKR |
ISL6609, ISL6609A
Timing Diagram
2.5V
PWM
t PDHU
t PDLU
t TSSHD
UGATE
LGATE
1V
t RU
1V
t RL
t PTS
t TSSHD
t RU
t FU
t PTS
t PDLL
t PDHL
t FL
FIGURE 1. TIMING DIAGRAM
Operation and Adaptive Shoot-Through Protection
Designed for high speed switching, the ISL6609, ISL6609A
MOSFET driver controls both high-side and low-side N-
Channel FETs from one externally provided PWM signal.
current capability enable the lower gate driver to absorb the
current injected into the lower gate through the drain-to-gate
capacitor of the lower MOSFET and help prevent shoot
through caused by the self turn-on of the lower MOSFET due
to high dV/dt of the switching node.
A rising transition on PWM initiates the turn-off of the lower
MOSFET (see “Timing Diagram”). After a short propagation
delay [t PDLL ], the lower gate begins to fall. Typical fall times
[t FL ] are provided in the “Electrical Specifications” table on
page 5. Adaptive shoot-through circuitry monitors the
LGATE voltage and turns on the upper gate following a short
delay time [t PDHU ] after the LGATE voltage drops below
~1V. The upper gate drive then begins to rise [t RU ] and the
upper MOSFET turns on.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [t PDLU ] is encountered before the upper
gate begins to fall [t FU ]. The adaptive shoot-through circuitry
monitors the UGATE-PHASE voltage and turns on the lower
MOSFET a short delay time, t PDHL , after the upper
MOSFET’s gate voltage drops below 1V. The lower gate then
rises [t RL ], turning on the lower MOSFET. These methods
prevent both the lower and upper MOSFETs from conducting
simultaneously (shoot-through), while adapting the dead
time to the gate charge characteristics of the MOSFETs
being used.
This driver is optimized for voltage regulators with large step
down ratio. The lower MOSFET is usually sized larger
compared to the upper MOSFET because the lower MOSFET
conducts for a longer time during a switching period. The
lower gate driver is therefore sized much larger to meet this
application requirement. The 0.4 Ω ON-resistance and 4A sink
7
Three-State PWM Input
A unique feature of the ISL6609, ISL6609A is the adaptable
three-state PWM input. Once the PWM signal enters the
shutdown window, either MOSFET previously conducting is
turned off. If the PWM signal remains within the shutdown
window for longer than the gate turn-off propagation delay of
the previously conducting MOSFET, the output drivers are
disabled and both MOSFET gates are pulled and held low.
The shutdown state is removed when the PWM signal moves
outside the shutdown window. The PWM rising and falling
thresholds outlined in the “Electrical Specifications” table on
page 5 determine when the lower and upper gates are
enabled. During normal operation in a typical application, the
PWM rise and fall times through the shutdown window should
not exceed either output’s turn-off propagation delay plus the
MOSFET gate discharge time to ~1V. Abnormally long PWM
signal transition times through the shutdown window will
simply introduce additional dead time between turn off and
turn on of the synchronous bridge’s MOSFETs. For optimal
performance, no more than 100pF parasitic capacitive load
should be present on the PWM line of ISL6609, ISL6609A
(assuming an Intersil PWM controller is used).
Bootstrap Considerations
This driver features an internal bootstrap diode. Simply
adding an external capacitor across the BOOT and PHASE
pins completes the bootstrap circuit. The ISL6609A’s internal
FN9221.2
April 27, 2009
相关PDF资料 |
PDF描述 |
|---|---|
| ISL6610IRZ | IC MOSFET DRVR DUAL SYNC 16-QFN |
| ISL6612ACBZ | IC DRIVER MOSFET SYNC BUCK 8SOIC |
| ISL6612BCBZ | IC DRIVER MOSFET SYNC BUCK 8SOIC |
| ISL6613IR-T | IC MOSFET DRVR SYNC BUCK 10-DFN |
| ISL6614AIR-T | IC DRIVER DUAL SYNC BUCK 16-QFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6609CBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| ISL6609CBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| ISL6609CRZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| ISL6609CRZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| ISL6609IBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
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