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参数资料
| 型号： | ISL6609AIRZ-TK |
| 厂商： | Intersil |
| 文件页数： | 8/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR SYNC RECT 8-QFN |
| 标准包装： | 1 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 18ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VQFN 裸露焊盘 |
| 供应商设备封装： | 8-QFN（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1248 (CN2011-ZH PDF) |
| 其它名称： | ISL6609AIRZ-TKDKR |
ISL6609, ISL6609A
bootstrap resistor is designed to reduce the overcharging of
the bootstrap capacitor when exposed to excessively large
negative voltage swing at the PHASE node. Typically, such
large negative excursions occur in high current applications
that use D 2 -PAK and D-PAK MOSFETs or excessive layout
parasitic inductance.
The following equation helps select a proper bootstrap
capacitor size:
allowable power dissipation level will push the IC beyond the
maximum recommended operating junction temperature of
+125°C. The maximum allowable IC power dissipation for
the SO8 package is approximately 800mW at room
temperature, while the power dissipation capacity in the
QFN package, with an exposed heat escape pad, is slightly
better. See “Layout Considerations” on page 9 for thermal
transfer improvement suggestions. When designing the
driver into an application, it is recommended that the
C BOOT_CAP ≥ --------------------------------------
Q GATE = ------------------------------- ? N Q1
Q GATE
Δ V BOOT_CAP
Q G1 ? VCC
V GS1
(EQ. 1)
following calculation is used to ensure safe operation at the
desired frequency for the selected MOSFETs. The total gate
drive power losses due to the gate charge of MOSFETs and
the driver ’s internal circuitry and their corresponding average
driver current can be estimated with Equations 2 and 3,
respectively,
P Qg_Q1 = ---------------------------------- ? F SW ? N Q1
P Qg_Q2 = ---------------------------------- ? F SW ? N Q2
where Q G1 is the amount of gate charge per upper MOSFET
at V GS1 gate-source voltage and N Q1 is the number of
control MOSFETs. The Δ V BOOT_CAP term is defined as the
allowable droop in the rail of the upper gate drive.
As an example, suppose two IRLR7821 FETs are chosen as
the upper MOSFETs. The gate charge, Q G , from the data
sheet is 10nC at 4.5V (V GS ) gate-source voltage. Then the
Q GATE is calculated to be 22nC at VCC level. We will
P Qg_TOT = P Qg_Q1 + P Qg_Q2 + I Q ? VCC
Q G1 ? VCC 2
V GS1
Q G2 ? VCC 2
V GS2
(EQ. 2)
I DR = ? ------------------------------------------------------ + ----------------------------------------------------- ? ? F SW + I Q
assume a 200mV droop in drive voltage over the PWM
cycle. We find that a bootstrap capacitance of at least
0.110μF is required. The next larger standard value
capacitance is 0.22μF. A good quality ceramic capacitor is
recommended.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
? Q G1 ? UVCC ? N Q1 Q G2 ? LVCC ? N Q2 ?
? V GS1 V GS2 ?
(EQ. 3)
where the gate charge (Q G1 and Q G2 ) is defined at a
particular gate to source voltage (V GS1 and V GS2 ) in the
corresponding MOSFET datasheet; I Q is the driver ’s total
quiescent current with no load at both drive outputs; N Q1
and N Q2 are number of upper and lower MOSFETs,
respectively. The I Q V CC product is the quiescent power of
the driver without capacitive load and is typically negligible.
The total gate drive power losses are dissipated among the
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
losses, the rest will be dissipated by the external gate
0.4
0.2
20nC
0.0
0.0 0.1
Q GATE = 100nC
50nC
0.2 0.3 0.4 0.5
0.6
0.7
0.8
0.9
1.0
resistors (R G1 and R G2 , should be a short to avoid
interfering with the operation shoot-through protection
circuitry) and the internal gate resistors (R GI1 and R GI2 ) of
MOSFETs. Figures 3 and 4 show the typical upper and lower
gate drives turn-on transition path. The power dissipation on
Δ V BOOT (V)
FIGURE 2. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
the driver can be roughly estimated as:
P DR_UP = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
? R HI1 + R EXT1 R LO1 + R EXT1 ?
P DR_LOW = ? ? ? ---------------------
? R HI2 + R EXT2 R LO2 + R EXT2 ?
VOLTAGE
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency (F SW ), the output drive impedance, the
external gate resistance, and the selected MOSFET’s
internal gate resistance and total gate charge. Calculating
P DR = P DR_UP + P DR_LOW + I Q ? VCC
? R HI1 R LO1 ? P Qg_Q1
? R HI2 R LO2 ? P Qg_Q2
-------------------------------------- + ----------------------------------------
2
2
(EQ. 4)
R EXT2 = R G1 + -------------
N
R EXT2 = R G2 + -------------
N
the power dissipation in the driver for a desired application is
critical to ensure safe operation. Exceeding the maximum
8
R GI1
Q1
R GI2
Q2
FN9221.2
April 27, 2009
相关PDF资料 |
PDF描述 |
|---|---|
| ISL6610IRZ | IC MOSFET DRVR DUAL SYNC 16-QFN |
| ISL6612ACBZ | IC DRIVER MOSFET SYNC BUCK 8SOIC |
| ISL6612BCBZ | IC DRIVER MOSFET SYNC BUCK 8SOIC |
| ISL6613IR-T | IC MOSFET DRVR SYNC BUCK 10-DFN |
| ISL6614AIR-T | IC DRIVER DUAL SYNC BUCK 16-QFN |
相关代理商/技术参数 |
参数描述 |
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| ISL6609CBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| ISL6609CBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| ISL6609CRZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| ISL6609CRZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| ISL6609IBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
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