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参数资料
| 型号： | ISL78010ANZ-T |
| 厂商： | Intersil |
| 文件页数： | 14/19页 |
| 文件大小： | 0K |
| 描述： | IC REG MULTI-OUTP 32-TQFP |
| 标准包装： | 2,000 |
| 应用： | LCD 显示器，车用 |
| 电流 - 电源： | 1.7mA |
| 电源电压： | 3 V ~ 5.5 V |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-TQFP |
| 供应商设备封装： | 32-TQFP（5x5） |
| 包装： | 带卷 (TR) |
ISL78010
more output current under the low dropout condition (forced
beta of 10). Typical V LOGIC voltage supported by the
ISL78010 ranges from +1.3V to V DD - 0.2V. A fault
comparator is also included for monitoring the output
voltage. The undervoltage threshold is set at 25% below the
CHARGE PUMP
V IN OUTPUT
OR A VDD
7k Ω
1.2V reference.
Set-Up Output Voltage
the output voltages of V ON , V OFF , and V LOGIC are as
determined by Equations 12, 13 and 14:
ISL78010
DRVP
NPN
CASCODE
TRANSISTOR
Q3
V ON
V ON = V REF × ? 1 + ---------- ?
V OFF = V REFN + ---------- × ( V REFN – V REF )
V LOGIC = V REF × ? ?
? R 42 ?
R 41 ?
? R 12 ?
? R 11 ?
R 22
R 21
1 + ----------
?
(EQ. 12)
(EQ. 13)
(EQ. 14)
FBP
FIGURE 26. CASCODE NPN TRANSISTOR CONFIGURATION
FOR HIGH CHARGE PUMP OUTPUT VOLTAGE
(>36V)
where V REF = 1.2V and V REFN = 0.2V.
Resistor networks in the order of 250k Ω , 120k Ω and 10k Ω
0.1μF
LX
are recommended for V ON , V OFF and V LOGIC , respectively.
Charge Pump
0.1μF
A VDD
N POSITIVE ≥ --------------------------------------------------------------
To generate an output voltage higher than V BOOST , single or
multiple stages of charge pumps are needed. The number of
stages is determined by the input and output voltage. Use
Equation 15 to calculate positive charge pump stages:
V OUT + V CE – V INPUT (EQ. 15)
V INPUT – 2 × V F
DRVP
ISL78010
7k Ω
0.47μF
Q3
0.1μF
0.1μF
0.1μF
V ON
(>36V)
0.22μF
FBP
where V CE is the dropout voltage of the pass component of
the linear regulator. It ranges from 0.3V to 1V depending on
V OUTPUT + V CE
N NEGATIVE ≥ -------------------------------------------------
the transistor. V F is the forward-voltage of the charge pump
rectifier diode.
The number of negative charge pump stages is given by
Equation 16:
(EQ. 16)
V INPUT – 2 × V F
To achieve high efficiency and low material cost, the lowest
number of charge pump stages that can meet the above
requirements is preferred.
High Charge Pump Output Voltage (>36V)
Applications
In applications where the charge pump output voltage is over
36V, an external NPN transistor must be inserted between
the DRVP pin and the base of pass transistor Q 3 as shown
in Figure 26, or the linear regulator can control only one
stage charge pump and regulate the final charge pump
output as shown in Figure 27.
14
FIGURE 27. THE LINEAR REGULATOR CONTROLS ONE
STAGE OF CHARGE PUMP
Discontinuous/Continuous Boost Operation and
its Effect on the Charge Pumps
The ISL78010 V ON and V OFF architecture uses LX
switching edges to drive diode charge pumps from which
LDO regulators generate the V ON and V OFF supplies.
Should a regular supply of LX switching edges be
interrupted - for example, during discontinuous operation at
light A VDD boost load currents - it may affect the
performance of V ON and V OFF regulation, depending on
their exact loading conditions at the time.
To optimize V ON /V OFF regulation, the boundary of
discontinuous/continuous operation of the boost converter
can be adjusted, by suitable choice of inductor (given V IN ,
V OUT , switching frequency and the A VDD current loading), to
be in continuous operation.
FN6501.2
December 4, 2013
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