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参数资料
| 型号： | ISL89165FBECZ |
| 厂商： | Intersil |
| 文件页数： | 5/15页 |
| 文件大小： | 0K |
| 描述： | MOSFET DRIVER 2CH 6A 8SOIC |
| 标准包装： | 980 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 25ns |
| 电流 - 峰： | 6A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 7.5 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOIC-EP |
| 包装： | 管件 |
ISL89163, ISL89164, ISL89165
DC Electrical Specifications V DD = 12V, GND = 0V, No load on OUTA or OUTB, unless otherwise specified. Boldface limits apply
over the operating junction temperature range, -40°C to +125°C. (Continued)
T J = +25°C
T J = -40°C to +125°C
MIN
MAX
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
(Note 8)
(Note 8)
UNITS
INPUTS
Input Range
for INA, INB, ENA, ENB
Logic 0 Threshold
for INA, INB, ENA, ENB
(Note 11)
Logic 1 Threshold
for INA, INB, ENA, ENB
(Note 11)
Input Capacitance of INA, INB,
ENA, ENB (Note 10)
Input Bias Current
for INA, INB, ENA, ENB
V IN
V IL
V IH
C IN
I IN
Option A, B, or C
Option A, nominally 37% x 3.3V
Option B, nominally 37% x 5.0V
Option C, nominally 20% x 12V
(Note 9)
Option A, nominally 63% x 3.3V
Option B, nominally 63% x 5.0V
Option C, nominally 80% x 12V
(Note 9)
GND < V IN < V DD
-
-
-
-
-
-
-
-
-
-
1.22
1.85
2.4
2.08
3.15
9.6
2
-
-
-
-
-
-
-
-
-
-
GND
1.12
1.70
2.00
1.98
3.00
9.24
-
-10
V DD
1.32
2.00
2.76
2.18
3.30
9.96
-
+10
V
V
V
V
V
V
V
pF
μA
OUTPUTS
High Level Output Voltage
Low Level Output Voltage
V OHA V OHB
V OLA
V OLB
-
-
-
-
-
-
V DD - 0.1
GND
V DD
GND + 0.1
V
V
Peak Output Source Current
Peak Output Sink Current
I O
I O
V O (initial) = 0V, C LOAD = 10nF
V O (initial) = 12V, C LOAD = 10nF
-
-
-6
+6
-
-
-
-
-
-
A
A
NOTES:
8. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
9. The nominal 20% and 80% thresholds for option C are valid for any value within the specified range of VDD.
10. This parameter is taken from the simulation models for the input FET. The actual capacitance on this input will be dominated by the PCB parasitic
capacitance.
11. The true state input voltage for the non-inverted inputs is greater than the Logic 1 threshold voltage. The true state input voltage for the inverted
inputs is less than the logic 0 threshold voltage.
12. A 400μs delay further inhibits the release of the output state when the UV positive going threshold is crossed. See Figure 9.
5
FN7707.3
March 7, 2012
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| ISL89165FBECZ-T | 功能描述:MOSFET DRIVER 2CH 6A 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89165FRTAZ | 功能描述:MOSFET DRIVER 2CH 3.3V 6A 8TDFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89165FRTAZ-T | 功能描述:MOSFET DRIVER 2CH 3.3V 6A 8TDFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89165FRTBZ | 功能描述:MOSFET DRIVER 2CH 5.0V 6A 8TDFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89165FRTBZ-T | 功能描述:MOSFET DRIVER 2CH 5.0V 6A 8TDFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
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