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参数资料
| 型号： | ISL9N322AD3ST |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | POWER SUP SWITCHER 41W 5.1V MED |
| 中文描述： | 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件页数： | 10/11页 |
| 文件大小： | 135K |
| 代理商： | ISL9N322AD3ST |
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
SPICE Thermal Model
REV 23 Sept 2000
ISL9N322AT
CTHERM1 th 6 1.3e-3
CTHERM2 6 5 1.5e-3
CTHERM3 5 4 1.6e-3
CTHERM4 4 3 1.7e-3
CTHERM5 3 2 5.8e-3
CTHERM6 2 tl 2e-2
RTHERM1 th 6 3.5e-3
RTHERM2 6 5 4.5e-3
RTHERM3 5 4 6.2e-2
RTHERM4 4 3 6.8e-1
RTHERM5 3 2 8.1e-1
RTHERM6 2 tl 8.3e-1
SABER Thermal Model
SABER thermal model ISL9N322AT
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.3e-3
ctherm.ctherm2 6 5 = 1.5e-3
ctherm.ctherm3 5 4 = 1.6e-3
ctherm.ctherm4 4 3 = 1.7e-3
ctherm.ctherm5 3 2 = 5.8e-3
ctherm.ctherm6 2 tl = 2e-2
rtherm.rtherm1 th 6 = 3.5e-3
rtherm.rtherm2 6 5 = 4.5e-3
rtherm.rtherm3 5 4 = 6.2e-2
rtherm.rtherm4 4 3 = 6.8e-1
rtherm.rtherm5 3 2 = 8.1e-1
rtherm.rtherm6 2 tl = 8.3e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
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| ISL9N322AP3 | 功能描述:MOSFET N-Ch PWM Optimized Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ISL9N322AS3ST | 功能描述:MOSFET N-Ch MOSFET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ISL9N327AD3ST | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ISL9N7030BLP3 | 功能描述:MOSFET 30V 0.009 Ohm N-Ch Logic Level 74a RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ISL9N7030BLS3ST | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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