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参数资料
型号： ISL9N322AD3ST
厂商： FAIRCHILD SEMICONDUCTOR CORP
元件分类： JFETs
英文描述： POWER SUP SWITCHER 41W 5.1V MED
中文描述： 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件页数： 2/11页
文件大小： 135K
代理商： ISL9N322AD3ST
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
(V
GS
= 4.5V)
Switching Characteristics
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
(V
GS
= 10V)
Unclamped Inductive Switching
t
av
Avalanche Time
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
V
V
V
D
= 250
= 25V
= 0V
=
μ
A, V
GS
= 0V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
DS
μ
A
GS
T
C
= 150
o
250
±
100
I
GSS
Gate to Source Leakage Current
GS
±
20V
nA
Gate to Source Threshold Voltage
V
I
D
I
D
GS
= 20A, V
= 18A, V
= V
DS
, I
D
= 250
= 10V
= 4.5V
μ
A
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
GS
0.018
0.028
0.022
0.033
GS
V
f = 1MHz
DS
= 15V, V
GS
= 0V,
-
-
-
-
-
-
-
-
970
205
80
18
9
1.0
3.5
3.0
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
V
V
GS
= 0V to 10V
= 0V to 5V
= 0V to 1V
V
I
D
I
g
DD
= 18A
= 1.0mA
= 15V
27
14
1.5
-
-
GS
GS
V
V
DD
GS
= 15V, I
= 4.5V, R
D
= 8A
GS
= 16
-
-
-
-
-
-
-
87
-
-
-
-
78
ns
ns
ns
ns
ns
ns
11
47
24
28
-
V
V
DD
GS
= 15V, I
= 10V, R
D
= 8A
= 16
GS
-
-
-
-
-
-
-
7
54
-
-
-
-
108
ns
ns
ns
ns
ns
ns
29
45
27
-
I
D
= 2.7A, L = 3mH
180
-
-
μ
s
V
SD
Source to Drain Diode Voltage
I
I
I
I
SD
= 18A
= 9A
= 18A, dI
= 18A, dI
-
-
-
-
-
-
-
-
1.25
1.0
25
17
V
V
ns
nC
SD
t
Q
rr
Reverse Recovery Time
Reverse Recovered Charge
SD
SD
/dt = 100A/
/dt = 100A/
μ
μ
s
s
RR
SD
SD
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