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参数资料
| 型号： | ISL9N322AD3ST |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | POWER SUP SWITCHER 41W 5.1V MED |
| 中文描述： | 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件页数： | 8/11页 |
| 文件大小： | 135K |
| 代理商： | ISL9N322AD3ST |
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
PSPICE Electrical Model
.SUBCKT ISL9N322AD3 2 1 3 ;
CA 12 8 8e-10
CB 15 14 9e-10
CIN 6 8 8.9e-10
rev January 2001
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 31.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.41e-9
LSOURCE 3 7 3.99e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2e-3
RGATE 9 20 2.65
RLDRAIN 2 5 10
RLGATE 1 9 44.1
RLSOURCE 3 7 39.9
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*75),5))}
.MODEL DBODYMOD D (IS = 1.28e-11 RS = 8.48e-3 TRS1 = 1.6e-3 TRS2 = 3e-6 XTI=2 CJO = 5.7e-10 TT = 9.5e-9 M = 0.57)
.MODEL DBREAKMOD D (RS = 0.22 TRS1 = 8e-4 TRS2 = -8.9e-6)
.MODEL DPLCAPMOD D (CJO = 3.7e-10 IS = 1e-30 N = 10 M = 0.48)
.MODEL MMEDMOD NMOS (VTO = 1.99 KP = 8 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.65)
.MODEL MSTROMOD NMOS (VTO = 2.4 KP = 32 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.62 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 26.5 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 9e-4 TC2 = 0)
.MODEL RDRAINMOD RES (TC1 = 2e-2 TC2 = 4e-5)
.MODEL RSLCMOD RES (TC1 = 1e-3 TC2 = 1e-7)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.6e-3 TC2 = -8e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.6e-3 TC2 = 1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.0 VOFF= -2.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= -3.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.2)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.5)
.ENDS
Note: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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