参数资料
型号: ISL9R18120G2
厂商: Fairchild Semiconductor
文件页数: 1/9页
文件大小: 1809K
描述: DIODE STEALTH 1200V 18A TO247-2
产品变化通告: Lead Frame Change 20/Dec/2007
标准包装: 150
系列: Stealth™
二极管类型: 标准
电压 - (Vr)(最大): 1200V(1.2kV)
电流 - 平均整流 (Io): 18A
电压 - 在 If 时为正向 (Vf)(最大): 3.3V @ 18A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 70ns
电流 - 在 Vr 时反向漏电: 100µA @ 1200V
安装类型: 通孔,径向
封装/外壳: TO-247-2
供应商设备封装: TO-247
包装: 管件
Rev.
C2
-55 to 175 °C
ISL9R18120G2
,
ISL9R18120P2
,
I
SL9R18120S3S
— STEALTH? Diode
ISL9R18120G2,
ISL9R1
8120P2,
Applications
 Hard Switched PFC Boost Diode
 UPS Free Wheeling Diode
 Motor Drive FWD
 SMPS FWD
 Snubber Diode
Device Maximum Ratings
TC
= 25°C unless otherwise noted
Symbol
Parameter
Rating Unit
VRRM
Repetitive Peak Reverse Voltage
1200 V
VRWM
Working Peak Reverse Voltage
1200 V
VR
DC Blocking Voltage
1200 V
IF(AV)
Average Rectified Forward Current (TC
= 92
oC)
18
A
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
36
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
200
A
PD
Power Dissipation
125
W
EAVL
Avalanche Energy (1A, 40mH)
20
mJ
TJ, TSTG
Operating and Storage Temperature Range
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
300
260
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
JEDEC TO-220AC
ANODE
CATHODE
JEDEC TO-263AB
CATHODE
(FLANGE)
N / C
2 LEAD
TO-247
ANODE
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
ANODE
CATHODE
(FLANGE)
Package
Symbol
?
Stealth Recovery trr
= 300 ns (@ IF
= 18 A)
? Max Forward Voltage, VF
= 3.3 V (@ T
C
= 25°C)
?
1200
V Reverse Voltage and High Reliability
? Avalanche Energy Rated
? RoHS Compliant
ISL9R18120S3S
18
A, 1200
V, STEALTH? Diode
Features
The ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S
is a
STEALTH? diode optimized for low loss performance in high
frequency hard switched applications. The STEALTH? family
exhibits low reverse recovery current (IRR) and exceptionally soft
recovery under typical operating conditions. This device is
intended for use as
a free wheeling or boost diode in power
supplies and other power switching applications. The low
IRR
and short ta phase reduce loss
in switching transistors. The
soft recovery minimizes
ringing, expanding the range of
conditions under which the diode may be operated without the
use of additional snubber circuitry. Consider using the
STEALTH? diode with an SMPS IGBT to provide the most
efficient and highest power density design at lower cost.
?2002
Fairchild
Semiconductor Corporation
ISL9R18120G2, ISL9R18120P2,
ISL9R18120S3S
www.fairchildsemi.com
1
Description
February
2014
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相关代理商/技术参数
参数描述
ISL9R18120G2_Q 功能描述:整流器 18A 1200V Stealt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R18120P2 功能描述:整流器 18A 1200V Stealt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R18120P2_Q 功能描述:整流器 18A 1200V Stealt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R18120S3ST 功能描述:整流器 18A 1200V Stealt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R18120S3ST_Q 功能描述:整流器 18A 1200V Stealt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel