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| 型号： | IXA611S3T/R |
| 厂商： | IXYS |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF BRDG 600MA 16-SOI |
| 标准包装： | 1,000 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 120ns |
| 电流 - 峰： | 600mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 650V |
| 电源电压： | 10 V ~ 35 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 带卷 (TR) |
IXA611
600mA Half-Bridge Driver
Preliminary Data Sheet
Features
? Floating High Side Driver with boot-strap Power
supply along with a Low Side Driver.
? Fully operational to 650V
? ± 50V/ns dV/dt immunity
? Gate drive power supply range: 10 - 35V
? Undervoltage lockout for both output drivers
? Separate Logic power supply range: 3.3V to V CL
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes
? Latch-Up protected over entire
operating range
? High peak output current: 600 mA
? Matched propagation delay for both outputs
? Low output impedance
? Low power supply current
? Immune to negative voltage transients
General Description
The IXA611 is a Bridge Driver for N-channel MOSFETs and
IGBTs with a high side and low side output, whose input
signals reference the low side. The High Side driver can
control a MOSFET or IGBT connected to a positive buss
voltage up to 650V. The logic input stages are compatible with
TTL or CMOS, have built-in hysteresis and are fully immune to
latch up over the entire operating range. The IXA611 can
withstand dV/dt on the output side up to ± 50V/ns.
The IXA611 comes in either the 16-PIN SOIC package
(IXA611S3) or the 14-PIN DIP through-hole package
(IXA611P7)
Applications
?
?
?
?
Driving MOSFETs and IGBTs in half-bridge circuits
High voltage, high side and low side drivers
Motor Controls
Switch Mode Power Supplies (SMPS)
Warning: The IXA611 is ESD sensitive.
Figure 1. Typical Circuit Connection
Copyright ? IXYS CORPORATION 2004
?
?
DC to DC Converters
Class D Switching Amplifiers
First Release
DS99166(04/04)
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相关代理商/技术参数 |
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| IXA70I1200NA | 功能描述:IGBT 模块 XPT Single IGBT RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| IXA90IF650NA | 功能描述:IGBT 模块 XPT Single IGBT RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| IXAN0069 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:DC to DC Synchronous Converter Design |
| IXB200I600NA | 功能描述:MOSFET XPT Single IGBT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXB611P1 | 功能描述:IC DRIVER HALF BRDG 600MA 8-PDIP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
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