参数资料
| 型号： | IXDS502D1B |
| 厂商： | IXYS |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | IC GATE LS DRVR SGL 2A 6-DFN |
| 标准包装： | 121 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 4 欧姆 |
| 电流 - 输出 / 通道： | 500mA |
| 电流 - 峰值输出： | 2A |
| 电源电压： | 4.5 V ~ 25 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-VFDFN |
| 供应商设备封装： | 6-DFN |
| 包装： | 盒 |
Preliminary Technical Information
IXDR502 / IXDS502
2 Ampere Single Low-Side Ultrafast MOSFET Drivers
Features
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes
? Latch-Up Protected up to 2 Amps
? High 2A Peak Output Current
? Wide Operating Range: 4.5V to 25V
? -55°C to +125°C Extended Operating
Temperature
? High Capacitive Load Drive Capability: 1000pF
in <10ns
? Matched Rise And Fall Times
? Low Propagation Delay Time
? Low Output Impedance
? Low Supply Current
Applications
? Driving MOSFETs and IGBTs
? Motor Controls
General Description
The IXDR502, and IXDS502 each consist of a single 2A
CMOS high speed gate driver for driving the latest IXYS
MOSFETs & IGBTs. Each type can source and sink 2
Amps of peak current while producing voltage rise and
fall times of less than 15ns. The input of each driver is
TTL or CMOS compatible and is virtually immune to
latch up. Patented* design innovations eliminate cross
conduction and current "shoot-through". Improved
speed and drive capabilities are further enhanced by
very quick & matched rise and fall times.
The IXDR502 is configured as a single inverting gate
driver, and the IXDS502 is configured as a single non-
inverting gate driver.
The IXDR502, and IXDS502 are available in the 6-Lead
DFN (D1) package, which occupies less than 20% of
the board area of a typical 8-Pin SOIC package.
?
?
?
?
?
Line Drivers
Pulse Generators
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
?
?
?
Pulse Transformer Driver
Class D Switching Amplifiers
Power Charge Pumps
*United States Patent 6,917,227
Ordering Information
Part Number
IXDR502D1B
IXDR502D1BT/R
IXDS502D1B
IXDS502D1BT/R
Description
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
Package
Type
6-Lead DFN
6-Lead DFN
6-Lead DFN
6-Lead DFN
Packing Style
2” x 2” Waffle Pack
7” Tape and Reel
2” x 2” Waffle Pack
7” Tape and Reel
Pack
Qty
121
2500
121
2500
Configuration
Single Inverting
Driver
Single Non-
Inverting Driver
NOTE: All parts are lead-free and RoHS Compliant
Copyright ? 2007 IXYS CORPORATION All rights reserved
First Release
DS99909(10/07)
相关PDF资料 |
PDF描述 |
|---|---|
| IXI859S1 | IC REG/GATE DRIVER 3.3V 8-SOIC |
| JW-23-04-T-S-450-250 | CONN STACKER .156" 23POS SGL TIN |
| KA278R33CTU | IC REG LDO 3.3V 2A TO-220FL-4 |
| KA2803BD | IC EARTH LEAKAGE DETECTOR 8-SOP |
| KA2807 | IC GROUND FAULT INTERRUPTER 8DIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDT30N120 | 功能描述:IGBT 晶体管 60 Amps 1200V 2.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDT30N120AU1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 50A I(C) | TO-268AA |
| IXDT30N120D1 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Voltage IGBT with optional Diode |
| IXE5216EC.C0 | 制造商:Intel 功能描述:Electronic Component |
| IXE611P1 | 功能描述:IC DRIVER MOSF/IGBT HALF 8-PDIP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
发布紧急采购，3分钟左右您将得到回复。