参数资料
型号: IXDS502D1B
厂商: IXYS
文件页数: 3/11页
文件大小: 0K
描述: IC GATE LS DRVR SGL 2A 6-DFN
标准包装: 121
类型: 低端
输入类型: 非反相
输出数: 1
导通状态电阻: 4 欧姆
电流 - 输出 / 通道: 500mA
电流 - 峰值输出: 2A
电源电压: 4.5 V ~ 25 V
工作温度: -55°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 6-VFDFN
供应商设备封装: 6-DFN
包装:
IXDR502 / IXDS502
Absolute Maximum Ratings (1)
Operating Ratings (2)
Parameter
Value
Parameter
Value
Supply Voltage
All Other Pins
Junction Temperature
Storage Temperature
Lead Temperature (10 Sec)
35V
-0.3 V to V CC + 0.3V
150 ° C
-65 ° C to 150 ° C
300 ° C
Operating Supply Voltage 4.5V to 25V
Operating Temperature Range -55 ° C to 125 ° C
Package Thermal Resistance *
6-Lead DFN (D1) θ J-A (typ) 125-200 ° C/W
6-Lead DFN (D1) θ J-C (max) 3.3 ° C/W
6-Lead DFN (D1) θ J-S (typ) 7.3 ° C/W
Electrical Characteristics @ T A = 25 o C (3)
Unless otherwise noted, 4.5V ≤ V CC ≤ 25V .
All voltage measurements with respect to GND. IXD_502 configured as described in Test Conditions .
Symbol
Parameter
Test Conditions
Min
Typ (4)
Max
Units
V IH
V IL
High input voltage
Low input voltage
4.5V ≤ V CC ≤ 18V
4.5V ≤ V CC ≤ 18V
2.5
1.0
V
V
V IN
Input voltage range
-5
V CC + 0.3
V
I IN
Input current
0V ≤ V IN ≤ V CC
-10
10
μ A
V OH
V OL
High output voltage
Low output voltage
V CC - 0.025
0.025
V
V
R OH
R OL
I PEAK
I DC
t R
t F
t ONDLY
t OFFDLY
V CC
I CC
High state output
resistance
Low state output
resistance
Peak output current
Continuous output
current
Rise time
Fall time
ON propagation delay
OFF propagation delay
Power supply voltage
Power supply current
V CC = 15V
V CC = 15V
V CC = 15V
C LOAD = 1000pF V CC = 15V
C LOAD = 1000pF V CC = 15V
C LOAD = 1000pF V CC = 15V
C LOAD = 1000pF V CC = 15V
V IN = 3.5V
V IN = 0V
V IN = +V CC , (4.5V ≤ V CC ≤ 18V)
4.5
3
2.2
2
7.5
6.5
25
20
15
1
0
4
3
0.5
12
10
35
30
25
2
15
15
?
?
A
A
ns
ns
ns
ns
V
mA
μ A
μ A
IXYS reserves the right to change limits, test conditions, and dimensions.
3
相关PDF资料
PDF描述
IXI859S1 IC REG/GATE DRIVER 3.3V 8-SOIC
JW-23-04-T-S-450-250 CONN STACKER .156" 23POS SGL TIN
KA278R33CTU IC REG LDO 3.3V 2A TO-220FL-4
KA2803BD IC EARTH LEAKAGE DETECTOR 8-SOP
KA2807 IC GROUND FAULT INTERRUPTER 8DIP
相关代理商/技术参数
参数描述
IXDT30N120 功能描述:IGBT 晶体管 60 Amps 1200V 2.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IXDT30N120AU1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 50A I(C) | TO-268AA
IXDT30N120D1 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Voltage IGBT with optional Diode
IXE5216EC.C0 制造商:Intel 功能描述:Electronic Component
IXE611P1 功能描述:IC DRIVER MOSF/IGBT HALF 8-PDIP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大(自引导启动):600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP(0.300",7.62mm) 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127