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参数资料
| 型号： | IXFB132N50P3 |
| 厂商： | IXYS CORP |
| 元件分类： | JFETs |
| 英文描述： | 132 A, 500 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLASTIC, PLUS264, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 142K |
| 代理商： | IXFB132N50P3 |
2011 IXYS CORPORATION, All Rights Reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
500
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
500
V
V
GSS
Continuous
±30
V
V
GSM
Transient
±40
V
I
D25
T
C = 25°C
132
A
I
DM
T
C = 25°C, Pulse Width Limited by TJM
330
A
I
A
T
C = 25°C
66
A
E
AS
T
C = 25°C3
J
dv/dt
I
S
≤ I
DM, VDD ≤ VDSS, TJ ≤ 150°C
35
V/ns
P
D
T
C = 25°C
1890
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6mm (0.062 in.) from Case for 10s
300
°C
T
SOLD
Plastic Body for 10s
260
°C
F
C
Mounting Force
30..120/6.7..27
N/lb.
Weight
10
g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 3mA
500
V
V
GS(th)
V
DS = VGS, ID = 8mA
3.0
5.0
V
I
GSS
V
GS = ±30V, VDS = 0V
±200 nA
I
DSS
V
DS = VDSS, VGS = 0V
50
μA
T
J = 125°C
6 mA
R
DS(on)
V
GS = 10V, ID = 0.5 IDSS, Note 1
39 m
Ω
IXFB132N50P3
V
DSS
=
500V
I
D25
=
132A
R
DS(on) ≤
≤≤≤≤
39m
Ω
t
rr
≤≤≤≤≤
250ns
DS100315(03/11)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Features
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DS(on) and QG
Advantages
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
Advance Technical Information
Polar3TM HiPerFETTM
Power MOSFET
G = Gate
D
= Drain
S = Source
Tab = Drain
PLUS264TM
Tab
S
G
D
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