参数资料
型号: IXFB132N50P3
厂商: IXYS CORP
元件分类: JFETs
英文描述: 132 A, 500 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: PLASTIC, PLUS264, 3 PIN
文件页数: 3/5页
文件大小: 142K
代理商: IXFB132N50P3
2011 IXYS CORPORATION, All Rights Reserved
IXFB132N50P3
Fig. 1. Output Characteristics @ TJ = 25C
0
20
40
60
80
100
120
140
01
23
45
6
VDS - Volts
ID
-
A
m
pere
s
VGS = 10V
8V
5V
6V
7V
Fig. 2. Extended Output Characteristics @ TJ = 25C
0
50
100
150
200
250
0
5
10
15
20
25
VDS - Volts
ID
-
A
m
peres
VGS = 10V
8V
6V
5V
7V
Fig. 3. Output Characteristics @ TJ = 125C
0
20
40
60
80
100
120
140
02
4
6
8
10
12
14
VDS - Volts
ID
-
A
m
per
es
5V
6V
4V
VGS = 10V
8V
7V
Fig. 4. RDS(on) Normalized to ID = 66A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
R
D
S
(on)
-
N
o
rm
a
liz
e
d
VGS = 10V
I D = 132A
I D = 66A
Fig. 5. RDS(on) Normalized to ID = 66A Value vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
0
50
100
150
200
250
ID - Amperes
R
DS
(on)
-
N
o
rm
al
iz
ed
VGS = 10V
TJ = 125C
TJ = 25C
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
20
40
60
80
100
120
140
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
I D
-
A
m
per
es
相关PDF资料
PDF描述
IXGH4N250C 13 A, 2500 V, N-CHANNEL IGBT, TO-247
IXGH50N60B4 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
IXGH50N60C4D1 90 A, 600 V, N-CHANNEL IGBT, TO-247AD
IXGQ50N60C4D1 90 A, 600 V, N-CHANNEL IGBT
IXSP2N100 3 A, 1000 V, N-CHANNEL IGBT, TO-220AB
相关代理商/技术参数
参数描述
IXFB170N30P 功能描述:MOSFET Polar Power MOSFET HiPerFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB210N20P 功能描述:MOSFET 210 Amps 200V 0.0105 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB210N30P3 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB300N10P 功能描述:MOSFET POLAR PWR MOSFET 100V, 300A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB30N120P 功能描述:MOSFET 30 Amps 1200V 0.35 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube