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| 型号： | IXFH76N07-11 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 70V 76A TO-247AD |
| 产品目录绘图： | TO-247AD 3-Leads |
| 标准包装： | 30 |
| 系列： | HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 70V |
| 电流 - 连续漏极(Id) @ 25° C： | 76A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 3.4V @ 4mA |
| 闸电荷(Qg) @ Vgs： | 240nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4400pF @ 25V |
| 功率 - 最大： | 360W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247AD |
| 包装： | 管件 |
HiPerFET TM
V DSS
I D25
R DS(on)
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t rr , HDMOS TM Family
IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
60 V
60 V
70 V
70 V
76 A
76 A
76 A
76 A
11 m W
12 m W
11 m W
12 m W
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 10 k W
Continuous
Transient
N06
N07
N06
N07
60
70
60
70
± 20
± 30
V
V
V
V
V
V
(TAB)
I D25
T C
= 25 ° C (Chip capability = 125 A)
76
A
I D119
I DM
I AR
T C
T C
T C
= 119 ° C, limited by external leads
= 25 ° C, pulse width limited by T JM
= 25 ° C
76
304
100
A
A
A
G = Gate,
S = Source,
D = Drain,
TAB = Drain
E AR
T C = 25 ° C
30
mJ
Features
E AS
dv/dt
P D
T J
T JM
T stg
T L
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
2
5
360
-55 ... +175
175
-55 ... +150
300
J
V/ns
W
° C
° C
° C
° C
q
q
q
q
q
q
International standard package
JEDEC TO-247 AD
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
M d
Mounting torque
1.15/10 Nm/lb.in.
Weight
6
g
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
q
q
q
q
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
V DSS
V GS(th)
V GS = 0 V, I D = 250 m A
V DS = V GS , I D = 4 mA
N06
N07
60
70
2.0
3.4
V
V
V
q
q
q
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
I DSS
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
100
500
m A
m A
Advantages
V GS = 10 V, I D = 40 A
R DS(on)
76 N06/N07-11
76 N06/N07-12
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
11
12
m W
m W
q
q
q
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
92785H (12/98)
1-4
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相关代理商/技术参数 |
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| IXFH76N07-11 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-247 |
| IXFH76N07-12 | 功能描述:MOSFET 70V 76A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFH7N80 | 功能描述:MOSFET 7 Amps 800V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFH7N90 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
| IXFH7N90Q | 功能描述:MOSFET 7 Amps 900V 1.5W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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