参数资料
型号: IXFN160N30T
厂商: IXYS
文件页数: 2/5页
文件大小: 0K
描述: MOSFET N-CH 300V 130A SOT227
产品目录绘图: SOT-227, SOT-227B miniBLOC
标准包装: 10
系列: GigaMOS™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 300V
电流 - 连续漏极(Id) @ 25° C: 130A
开态Rds(最大)@ Id, Vgs @ 25° C: 19 毫欧 @ 60A,10V
Id 时的 Vgs(th)(最大): 5V @ 8mA
闸电荷(Qg) @ Vgs: 335nC @ 10V
输入电容 (Ciss) @ Vds: 28000pF @ 25V
功率 - 最大: 900W
安装类型: 底座安装
封装/外壳: SOT-227-4,miniBLOC
供应商设备封装: SOT-227B
包装: 管件
IXFN160N30T
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
SOT-227B (IXFN) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 80A
R G = 1 ? (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 80A
100
160
28
1770
125
37
38
105
25
335
123
56
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
(M4 screws (4x) supplied)
R thJC
0.138 ° C/W
R thCS
Source-Drain Diode
0.05
° C/W
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 60A, V GS = 0V, Note 1
160
640
1.3
A
A
V
t rr
Q RM
I RM
I F = 80A, V GS = 0V
-di/dt = 100A/ μ s
V R = 75V
1.09
13
200 ns
μC
A
Note 1: Pulse Test, t ≤ 300 μ s; Duty Cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
相关PDF资料
PDF描述
IXFN170N30P MOSFET N-CH 300V 138A SOT-227B
IXFN180N15P MOSFET N-CH 150V 150A SOT-227B
IXFN180N20 MOSFET N-CH 200V 180A SOT-227B
IXFN180N25T MOSFET N-CH 155A 250V SOT-227
IXFN200N07 MOSFET N-CH 70V 200A SOT-227B
相关代理商/技术参数
参数描述
IXFN16N100 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFN170N10 功能描述:MOSFET 170 Amps 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFN170N10 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B
IXFN170N30P 功能描述:MOSFET 138 Amps 300V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFN17N80 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs